An intuitionistic model for evaluating the dopant profiles in C-BAs MOSFETs: integrating capacitance–voltage method for large scale applications

Abstract

This study aims to perform a comprehensive assessment of the influence of dopant profile variations such as junction features, variability, and uniformity in C-BAs substrate MOSFET devices with other semiconductor materials using Sentaurus TCAD. The principal objective of our inquiry is to establish the efficacy and reliability of C-BAs MOSFETs in the face of real-world challenges, thereby providing valuable insights into their robustness and reliability. To initiate our exploration, by conducting a detailed scrutiny of C-BAs MOSFET technology, with a particular focus on emerging issues related to persistence and side-channel attacks. Subsequently, a particular examination of the dopant profile will be carried out through a well-selected sample set, followed by the application of C–V methodology for dopant profile characterization. By following this methodology, potential opportunities for enhancing the security of C-BAs MOSFETs can be identified, thus laying the groundwork for future research endeavors in the field of semiconductor device design.