Design-driven efficiency enhancement of CdTe1−xSex solar cells via interface band alignment and optimization

IF 2.5 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2025-08-07 DOI:10.1007/s10825-025-02394-3

Hichem Bencherif, Ziyad Younsi, Faycal Meddour, Mohamed Abbas, Shaeen Kalathil, Tarek Hidouri, Latha Marasamy, Ponnusamy Sasikumar

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Abstract

This study develops a comprehensive optical–electrical model to identify the efficiency-limiting mechanisms in CdTe_1−xSe_x solar cells. The aim is to provide a unified understanding of how various recombination pathways, tunneling-enhanced, Auger, Shockley–Read–Hall (SRH), interface, and non-radiative recombination, collectively impact device performance. While prior research typically focuses on isolated mechanisms, our integrated approach reveals their combined influence on efficiency losses. The model shows strong agreement with experimental data and serves as a fitness function for a multi-objective genetic algorithm (MOGA), enabling systematic optimization of device parameters. Our results identify Ga₂O₃ as a promising Cd-free ETL, achieving an optimized efficiency of 25.8%, with J_SC = 24.93 mA/cm², V_OC = 1.27 V, and FF = 80.28%. These findings offer valuable insights into degradation mechanisms and provide a pathway for designing high-performance, environmentally friendly CdTe_1-xSe_x solar cells.

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设计驱动的CdTe1−xSex太阳能电池的界面带对准和优化效率提高

本研究开发了一个全面的光电模型，以确定CdTe1−xSex太阳能电池的效率限制机制。目的是提供对各种重组途径（隧道增强、俄钻、肖克利-里德-霍尔（SRH）、界面和非辐射重组）如何共同影响设备性能的统一理解。虽然先前的研究通常侧重于孤立的机制，但我们的综合方法揭示了它们对效率损失的综合影响。该模型与实验数据吻合较好，可作为多目标遗传算法（MOGA）的适应度函数，实现器件参数的系统优化。我们的研究结果表明，Ga2O3是一种有前途的无cd ETL，优化后的效率为25.8%,JSC = 24.93 mA/cm2, VOC = 1.27 V, FF = 80.28%。这些发现为降解机制提供了有价值的见解，并为设计高性能、环保的CdTe1-xSex太阳能电池提供了途径。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.