Can Wang, Zhuo-Xuan Xie, Ling-Yu Zhang, Le Wei, Jing Guo
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引用次数: 0
Abstract
We theoretically investigated the effect of non-uniform distribution of acceptor-doped atoms on high-order harmonic generation (HHG) in doped semiconductors, employing two models related to actual doped semiconductors: linear and Gaussian distributions. Compared with uniformly doped semiconductors, we found that non-uniformly doped semiconductors with impurities localized on one side of the atomic chain exhibit enhanced below-band-gap harmonics and suppressed the second plateau of harmonics. Additionally, we observed distinct even harmonics in the low-energy region of HHG from non-uniformly doped semiconductors, as non-uniform doping breaks the translational symmetry of the crystal lattice. Moreover, by analyzing the energy band structure, the time-dependent population imaging (TDPI) and time-frequency analysis, we have illustrated the reasons for the harmonic differences between non-uniformly and uniformly doped semiconductors.
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Features publication of experimental and theoretical investigations in applied physics
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Coverage includes laser physics, linear and nonlinear optics, ultrafast phenomena, photonic devices, optical and laser materials, quantum optics, laser spectroscopy of atoms, molecules and clusters, and more
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In addition to regular papers Applied Physics B: Lasers and Optics features invited reviews. Fields of topical interest are covered by feature issues. The journal also includes a rapid communication section for the speedy publication of important and particularly interesting results.
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