Morphology and Optical Properties of Amorphous Thin Films (InSe)x(GaSe)100–x

IF 0.6 4区材料科学 Q4 MATERIALS SCIENCE, CERAMICS

Glass and Ceramics Pub Date : 2025-07-03 DOI:10.1007/s10717-025-00763-9

S. A. Kozyukhin, D. V. Pepelyaev, M. A. Teplonogova

引用次数: 0

Abstract

Nanoscale amorphous thin films of the (InSe)₂₀(GaSe)₈₀ and (InSe)₅₀(GaSe)₅₀ compositions were subjected to phase and elemental analysis, as well as to surface morphology studies. The optical transmission analysis of the films established their absorption to correspond to indirect allowed transitions in accordance with the Tauc model under the optical band gap values (E_g) of 1.26 and 1.07 eV for the (InSe)₂₀(GaSe)₈₀ and (InSe)₅₀(GaSe)₅₀ thin films, respectively.

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非晶薄膜（InSe）x(GaSe) 100-x的形貌和光学性质

对（InSe）20(GaSe)80和（InSe）50(GaSe)50组成的纳米非晶薄膜进行了物相分析和元素分析，并进行了表面形貌研究。通过对薄膜的光学透射分析，根据tac模型确定了（InSe）20(GaSe)80和（InSe）50(GaSe)50薄膜在光学带隙值（Eg）分别为1.26和1.07 eV下的吸收对应于间接允许跃迁。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Glass and Ceramics 工程技术-材料科学：硅酸盐

CiteScore

1.00

自引率

16.70%

发文量

审稿时长

6-12 weeks

期刊介绍： Glass and Ceramics reports on advances in basic and applied research and plant production techniques in glass and ceramics. The journal''s broad coverage includes developments in the areas of silicate chemistry, mineralogy and metallurgy, crystal chemistry, solid state reactions, raw materials, phase equilibria, reaction kinetics, physicochemical analysis, physics of dielectrics, and refractories, among others.