Dielectric response function of CdF2 single crystal in the THz–IR ranges

IF 2.8 3区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER
G.A. Komandin , I.I. Buchinskaya , S.V. Kuznetsov , I.E. Spector , P.P. Fedorov
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引用次数: 0

Abstract

The dielectric response function of the high-purity CdF2 crystal was determined based on the analysis of broadband transmission and reflection spectra in terahertz and far IR ranges. Absorption are mainly formed due to the superposition of the phonon contribution and many-particle mechanisms. Simultaneous analysis of the obtained spectra allow to expand the dynamic range necessary for calculating the parameters of both weak bands of many-particle processes and intense line of the optical phonon mode. Parameters of electric dipole first- and second order absorption processes in the THz–IR ranges were obtained using classical oscillator and coupled oscillator models. The spectra of the complex dielectric permittivity of CdF2 were calculated. The total contribution to the permittivity from difference many-particle processes was 4 % of the contribution of optical phonon modes. Many-particle absorption leads to an increase in dielectric losses by 4–5 times in the THz range.
CdF2单晶在太赫兹-红外波段的介电响应函数
通过对高纯度CdF2晶体在太赫兹和远红外波段的宽带传输和反射光谱分析,确定了晶体的介电响应函数。吸收主要是由于声子贡献和多粒子机制的叠加而形成的。同时分析得到的光谱可以扩大计算多粒子过程弱带和光声子模式强线参数所需的动态范围。利用经典振子模型和耦合振子模型,得到了太红外范围内电偶极子一阶和二阶吸收过程的参数。计算了CdF2的复介电常数谱。不同多粒子过程对介电常数的总贡献是光学声子模式贡献的4%。在太赫兹范围内,多粒子吸收导致介电损耗增加4-5倍。
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来源期刊
Physica B-condensed Matter
Physica B-condensed Matter 物理-物理:凝聚态物理
CiteScore
4.90
自引率
7.10%
发文量
703
审稿时长
44 days
期刊介绍: Physica B: Condensed Matter comprises all condensed matter and material physics that involve theoretical, computational and experimental work. Papers should contain further developments and a proper discussion on the physics of experimental or theoretical results in one of the following areas: -Magnetism -Materials physics -Nanostructures and nanomaterials -Optics and optical materials -Quantum materials -Semiconductors -Strongly correlated systems -Superconductivity -Surfaces and interfaces
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