Le Thi Kieu Oanh , Nguyen Nhu Tan Lanh , Dang Khanh Linh
{"title":"Influence of exchange-correlation effects on correlated electrical conductivity of triple-monolayer graphene systems","authors":"Le Thi Kieu Oanh , Nguyen Nhu Tan Lanh , Dang Khanh Linh","doi":"10.1016/j.micrna.2025.208356","DOIUrl":null,"url":null,"abstract":"<div><div>The random phase approximation (RPA), a quantum-level scheme that captures screening while neglecting exchange-correlation effects, has been widely employed to study transport properties in graphene, multilayer graphene, and N-layer graphene systems. In this work, we calculate the electrical conductivity <span><math><mrow><mi>σ</mi><mrow><mo>(</mo><mi>n</mi><mo>)</mo></mrow></mrow></math></span> of three-layer graphene systems, namely triple-monolayer graphene (3MLG) system, limited by spatially correlated charged impurity scattering, employing the RPA as well as the Hubbard approximation (HA) and the Singwi-Tosi-Land-Sjölander (STLS) scheme to respectively neglect or incorporate exchange-correlation effects. Specifically, we calculate the carrier-density-dependent conductivities of the first and second layers, <span><math><mrow><msub><mi>σ</mi><mn>1</mn></msub><mrow><mo>(</mo><msub><mi>n</mi><mn>1</mn></msub><mo>)</mo></mrow></mrow></math></span> and <span><math><mrow><msub><mi>σ</mi><mn>2</mn></msub><mrow><mo>(</mo><msub><mi>n</mi><mn>2</mn></msub><mo>)</mo></mrow></mrow></math></span>, as functions of the impurity correlation length <span><math><mrow><msub><mi>r</mi><mn>0</mn></msub></mrow></math></span> and the interlayer separation <span><math><mrow><mi>d</mi></mrow></math></span> in a 3MLG system. The results presented in this work provide deeper insights into how exchange-correlation effects influence correlated electrical conductivity in 3MLG structures.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"208 ","pages":"Article 208356"},"PeriodicalIF":3.0000,"publicationDate":"2025-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micro and Nanostructures","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2773012325002857","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
The random phase approximation (RPA), a quantum-level scheme that captures screening while neglecting exchange-correlation effects, has been widely employed to study transport properties in graphene, multilayer graphene, and N-layer graphene systems. In this work, we calculate the electrical conductivity of three-layer graphene systems, namely triple-monolayer graphene (3MLG) system, limited by spatially correlated charged impurity scattering, employing the RPA as well as the Hubbard approximation (HA) and the Singwi-Tosi-Land-Sjölander (STLS) scheme to respectively neglect or incorporate exchange-correlation effects. Specifically, we calculate the carrier-density-dependent conductivities of the first and second layers, and , as functions of the impurity correlation length and the interlayer separation in a 3MLG system. The results presented in this work provide deeper insights into how exchange-correlation effects influence correlated electrical conductivity in 3MLG structures.