Unveiling the role of ionic states of cesium halides for high-performance triboelectric nanogenerators: Applications in UV-sensitive devices

IF 4.9 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2025-09-24 DOI:10.1016/j.sna.2025.117094

Adarsh Raj Lingaraj , Vaishnavi Narayan , Rumana Farheen Sagade Muktar Ahmed , Kavya Kallahalli Mohankumar , Sangamesha Madanahalli Ankanathappa , Krishnaveni Sannathammegowda

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引用次数: 0

Abstract

Triboelectric nanogenerators (TENGs) have gained significant attention as sustainable energy-harvesting devices, offering versatility for powering wearable electronics, environmental sensors, and self-powered systems. This study explores the role of cesium halides (CsX, X = Cl, Br, I) in enhancing the triboelectric performance of polymer-based TENGs, focusing on their ionic states and UV-responsive properties. Incorporation of CsX into the polyvinyl alcohol (PVA) matrix significantly reduces the band gap, facilitating efficient charge generation and transfer, while the halides’ ionic nature and polarizability enhance charge trapping, also validated through Density Functional Theory (DFT). The addition of CsX to the PVA narrows the HOMO-LUMO energy gap contributing to enhanced electron-rich regions, which in turn improves tribopositivity of composite. Among the composites, the PVA-CsI TENG exhibited outstanding electrical performance, generating a maximum output voltage of 416.64 V, a current of 48.18 μA, and a peak power of 108 mW at a load resistance of 116 MΩ. Along with the self-powering capability of the device, the Ultraviolet (UV)-responsive behavior of PVA-CsI film is highlighted, suggesting potential for dual functionality.

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揭示高性能摩擦电纳米发电机中卤化铯离子态的作用：在紫外敏感器件中的应用

摩擦电纳米发电机（TENGs）作为一种可持续的能量收集设备，为可穿戴电子设备、环境传感器和自供电系统提供了多功能性，已经引起了人们的极大关注。本研究探讨了卤化铯（CsX, X = Cl, Br， I）在增强聚合物基TENGs摩擦电性能中的作用，重点研究了它们的离子态和紫外响应性能。在聚乙烯醇（PVA）基体中加入CsX可以显著减小带隙，促进有效的电荷生成和转移，而卤化物的离子性质和极化性增强了电荷捕获，这一点也通过密度泛函理论（DFT）得到了验证。在PVA中加入CsX缩小了HOMO-LUMO的能隙，增强了富电子区，从而提高了复合材料的摩擦正性。在复合材料中，PVA-CsI TENG表现出优异的电学性能，最大输出电压为416.64 V，电流为48.18 μA，负载电阻为116 MΩ时峰值功率为108 mW。随着器件的自供电能力，PVA-CsI薄膜的紫外（UV）响应行为被强调，表明双重功能的潜力。

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...