L. Anjo , G. Davoodi , S. Tatikyan , A. Grigoryan , G. Amatuni
{"title":"GaN thin films via plasma focus: A study of deposition shots and annealing effects","authors":"L. Anjo , G. Davoodi , S. Tatikyan , A. Grigoryan , G. Amatuni","doi":"10.1016/j.radphyschem.2025.113320","DOIUrl":null,"url":null,"abstract":"<div><div>Gallium Nitride (GaN) thin films were deposited on p-type Si (100) substrates using a plasma focus (PF) device, with a view to probing the effect of plasma shots number and post-deposition annealing on both optical and structural properties. The 2, 4, and 6 PF shot exposed films were first processed and then systematically characterized by several analytic techniques such as X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX), field emission scanning electron microscopy (FESEM), UV–VIS–NIR spectroscopy, and photoluminescence (PL) measurements.</div><div>The results demonstrated that increasing the number of plasma shots (2, 4 and 6 shots) and employing thermal annealing led to substantial improvements in crystallinity, surface morphology, and PL emission peak shifts. The results prove that varying deposition and annealing parameters, the PF method can be used effectively to tailor GaN thin films for optoelectronic devices.</div></div>","PeriodicalId":20861,"journal":{"name":"Radiation Physics and Chemistry","volume":"239 ","pages":"Article 113320"},"PeriodicalIF":2.8000,"publicationDate":"2025-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Radiation Physics and Chemistry","FirstCategoryId":"92","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0969806X25008126","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
Gallium Nitride (GaN) thin films were deposited on p-type Si (100) substrates using a plasma focus (PF) device, with a view to probing the effect of plasma shots number and post-deposition annealing on both optical and structural properties. The 2, 4, and 6 PF shot exposed films were first processed and then systematically characterized by several analytic techniques such as X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX), field emission scanning electron microscopy (FESEM), UV–VIS–NIR spectroscopy, and photoluminescence (PL) measurements.
The results demonstrated that increasing the number of plasma shots (2, 4 and 6 shots) and employing thermal annealing led to substantial improvements in crystallinity, surface morphology, and PL emission peak shifts. The results prove that varying deposition and annealing parameters, the PF method can be used effectively to tailor GaN thin films for optoelectronic devices.
期刊介绍:
Radiation Physics and Chemistry is a multidisciplinary journal that provides a medium for publication of substantial and original papers, reviews, and short communications which focus on research and developments involving ionizing radiation in radiation physics, radiation chemistry and radiation processing.
The journal aims to publish papers with significance to an international audience, containing substantial novelty and scientific impact. The Editors reserve the rights to reject, with or without external review, papers that do not meet these criteria. This could include papers that are very similar to previous publications, only with changed target substrates, employed materials, analyzed sites and experimental methods, report results without presenting new insights and/or hypothesis testing, or do not focus on the radiation effects.