{"title":"Pressure Sensors Based on the Third-Generation Semiconductor Silicon Carbide: A Comprehensive Review","authors":"Xudong Fang , Chen Wu , Bian Tian , Libo Zhao , Xueyong Wei , Zhuangde Jiang","doi":"10.1016/j.eng.2024.12.036","DOIUrl":null,"url":null,"abstract":"<div><div>Microelectromechanical system (MEMS) high-temperature pressure sensors are widely used in aerospace, petrochemical industries, automotive electronics, and other fields owing to their advantages of miniaturization, lightweight design, simplified signal processing, and high accuracy. In recent years, advances in semiconductor material growth technology and intelligent equipment operation have significantly increased interest in high-temperature pressure sensors based on the third-generation semiconductor silicon carbide (SiC). This review examines the material properties of SiC single crystals and discusses several technologies influencing the performance of SiC pressure sensors, including the piezoresistive effect, ohmic contact, etching processes, and packaging methodologies. Additionally, it explores future research directions in the field. The review highlights the importance of increasing operating temperatures and advancing sensor integration as critical trends for future SiC high-temperature pressure sensor research and applications.</div></div>","PeriodicalId":11783,"journal":{"name":"Engineering","volume":"52 ","pages":"Pages 183-203"},"PeriodicalIF":11.6000,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Engineering","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2095809925000281","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Microelectromechanical system (MEMS) high-temperature pressure sensors are widely used in aerospace, petrochemical industries, automotive electronics, and other fields owing to their advantages of miniaturization, lightweight design, simplified signal processing, and high accuracy. In recent years, advances in semiconductor material growth technology and intelligent equipment operation have significantly increased interest in high-temperature pressure sensors based on the third-generation semiconductor silicon carbide (SiC). This review examines the material properties of SiC single crystals and discusses several technologies influencing the performance of SiC pressure sensors, including the piezoresistive effect, ohmic contact, etching processes, and packaging methodologies. Additionally, it explores future research directions in the field. The review highlights the importance of increasing operating temperatures and advancing sensor integration as critical trends for future SiC high-temperature pressure sensor research and applications.
期刊介绍:
Engineering, an international open-access journal initiated by the Chinese Academy of Engineering (CAE) in 2015, serves as a distinguished platform for disseminating cutting-edge advancements in engineering R&D, sharing major research outputs, and highlighting key achievements worldwide. The journal's objectives encompass reporting progress in engineering science, fostering discussions on hot topics, addressing areas of interest, challenges, and prospects in engineering development, while considering human and environmental well-being and ethics in engineering. It aims to inspire breakthroughs and innovations with profound economic and social significance, propelling them to advanced international standards and transforming them into a new productive force. Ultimately, this endeavor seeks to bring about positive changes globally, benefit humanity, and shape a new future.