Optimization of process parameters to control diameter fluctuation during the monocrystalline silicon growth by hybrid neural network model and genetic algorithm
Jun Xiao , Qitao Zhang , Tai Li , Peilin He , Yuwei Wang , Kaifeng Liao , Guoqiang Lv , Xingwei Yang , Wenhui Ma
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引用次数: 0
Abstract
This study aims to construct a neural network-genetic algorithm collaborative optimization framework through a data-driven approach to break the challenge of diameter fluctuation control under multi-parameter coupling. Based on real-time data from the isothermal stage of industrial single crystal furnaces, the Grey Wolf Optimization algorithm is used to dynamically optimize the weights and hyperparameters of the Multi-Layer Perceptron. Consequently, a high-precision surrogate model of the relationship between process parameters (heater power, crystal pulling speed, crucible lift speed) and diameter fluctuation is established. Meanwhile, the thermal field stability is optimized by the Genetic Algorithm (i.e., a global search of the optimal parameter combination). Verified by factory measurements, the model prediction error is less than 5 %, and the optimal solutions for heater power, crystal pulling and crucible lift speed are 53.64 kW, 1.308 mm/min, and 0.163 mm/min, respectively. Actual production shows that the average diameter fluctuation of the crystal rods in the optimization group decreased from 1.48 ± 0.23 mm (original process) to 0.60 ± 0.15 mm (mean ± standard deviation), a reduction of 59.4 %. The coupled method significantly enhances the intelligence level of the single crystal silicon growth process, and provides a generalizable optimization paradigm for the preparation of other semiconductor crystals.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.