Figure of merit for evaluating the thin-film encapsulation's performance via mechanical, barrier and optical properties

IF 4.6 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering: B Pub Date : 2025-09-27 DOI:10.1016/j.mseb.2025.118821

Majiaqi Wu , Maoliang Jian , Lianqiao Yang

{"title":"Figure of merit for evaluating the thin-film encapsulation's performance via mechanical, barrier and optical properties","authors":"Majiaqi Wu , Maoliang Jian , Lianqiao Yang","doi":"10.1016/j.mseb.2025.118821","DOIUrl":null,"url":null,"abstract":"<div><div>The application of thin-film encapsulation (TFE) technology on electronic devices has achieved great success; however, there is no currently unified performance evaluation index for TFE. In this paper, a new and reliable figure of merit (FOM) model that can evaluate the performance of TFE comprehensively and efficiently is introduced, including film cracking onset strain (COS), shear failure strain, tensile and shear complete failure displacement, water vapor transmission rate (WVTR), optical transmittance, and film deposition rate. Through this model, we determined that the prepared SiN<sub>x</sub>-2 film exhibits superior comprehensive performance, and the FOM reached 2.50. Moreover, we found that the FOM was positively correlated with the film's COS, Young's modulus, and Poisson's ratio, while being negatively correlated with the substrate's Young's modulus, Poisson's ratio, and film's residual stress. Our work provides a universally applicable strategy for evaluating flexible TFE.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering: B","volume":"323 ","pages":"Article 118821"},"PeriodicalIF":4.6000,"publicationDate":"2025-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science and Engineering: B","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0921510725008451","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

Abstract

The application of thin-film encapsulation (TFE) technology on electronic devices has achieved great success; however, there is no currently unified performance evaluation index for TFE. In this paper, a new and reliable figure of merit (FOM) model that can evaluate the performance of TFE comprehensively and efficiently is introduced, including film cracking onset strain (COS), shear failure strain, tensile and shear complete failure displacement, water vapor transmission rate (WVTR), optical transmittance, and film deposition rate. Through this model, we determined that the prepared SiN_x-2 film exhibits superior comprehensive performance, and the FOM reached 2.50. Moreover, we found that the FOM was positively correlated with the film's COS, Young's modulus, and Poisson's ratio, while being negatively correlated with the substrate's Young's modulus, Poisson's ratio, and film's residual stress. Our work provides a universally applicable strategy for evaluating flexible TFE.

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通过机械性能、阻挡性能和光学性能来评价薄膜封装性能的优点图

薄膜封装（TFE）技术在电子器件上的应用取得了巨大成功；然而，目前还没有统一的TFE性能评价指标。本文介绍了一种新的、可靠的、能全面、高效评价TFE性能的性能图（FOM）模型，该模型包括薄膜开裂开始应变（COS）、剪切破坏应变、拉伸和剪切完全破坏位移、水蒸气透过率（WVTR）、光学透过率和薄膜沉积率。通过该模型，我们确定制备的SiNx-2薄膜具有优异的综合性能，FOM达到2.50。此外，我们发现FOM与薄膜的COS、杨氏模量和泊松比呈正相关，与衬底的杨氏模量、泊松比和薄膜的残余应力呈负相关。我们的工作为灵活TFE的评估提供了一个普遍适用的策略。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Materials Science and Engineering: B 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.