NEGF-Based Analysis of TMDC-Silicon Heterojunction Nanowire Gas Sensors for Oxygen and Hydrogen Detection

IF 3.3 3区 材料科学 Q3 CHEMISTRY, PHYSICAL
Silicon Pub Date : 2025-04-29 DOI:10.1007/s12633-025-03327-2
Ashish Raman, Prateek Kumar, Ravi Ranjan, Naveen Kumar
{"title":"NEGF-Based Analysis of TMDC-Silicon Heterojunction Nanowire Gas Sensors for Oxygen and Hydrogen Detection","authors":"Ashish Raman,&nbsp;Prateek Kumar,&nbsp;Ravi Ranjan,&nbsp;Naveen Kumar","doi":"10.1007/s12633-025-03327-2","DOIUrl":null,"url":null,"abstract":"<div><p>Gas sensors play a crucial role in this domain, prompting extensive research efforts. In this study, we analyze a TMDC-Si heterojunction-based gas sensor using the non-equilibrium Green’s function (NEGF) method. The sensor features a cylindrical configuration to minimize area consumption and is evaluated through IDS-VGS characteristics, the density of states at the source and drain electrodes, and transmission probability across the channel. By leveraging the variation in the work function of catalytic metal-based gate electrodes, the proposed sensor demonstrates effective detection of vital gases such as oxygen (O2) and hydrogen (H2). Our findings show that the WS2-Si heterojunction achieves a peak sensitivity of 104 for O2 detection, while MoTe2-Si exhibits superior linearity characteristics for H2 detection despite similar sensitivity across all heterojunctions. These results indicate the potential of the proposed sensor for integration into compact sensing integrated circuits (ICs) in future applications.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 8","pages":"2005 - 2014"},"PeriodicalIF":3.3000,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-025-03327-2","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0

Abstract

Gas sensors play a crucial role in this domain, prompting extensive research efforts. In this study, we analyze a TMDC-Si heterojunction-based gas sensor using the non-equilibrium Green’s function (NEGF) method. The sensor features a cylindrical configuration to minimize area consumption and is evaluated through IDS-VGS characteristics, the density of states at the source and drain electrodes, and transmission probability across the channel. By leveraging the variation in the work function of catalytic metal-based gate electrodes, the proposed sensor demonstrates effective detection of vital gases such as oxygen (O2) and hydrogen (H2). Our findings show that the WS2-Si heterojunction achieves a peak sensitivity of 104 for O2 detection, while MoTe2-Si exhibits superior linearity characteristics for H2 detection despite similar sensitivity across all heterojunctions. These results indicate the potential of the proposed sensor for integration into compact sensing integrated circuits (ICs) in future applications.

基于negf的tmdc -硅异质结纳米线氧氢气体传感器分析
气体传感器在这一领域发挥着至关重要的作用,推动了广泛的研究工作。在这项研究中,我们使用非平衡格林函数(NEGF)方法分析了基于TMDC-Si异质结的气体传感器。该传感器采用圆柱形结构,以最大限度地减少面积消耗,并通过IDS-VGS特性、源极和漏极的状态密度以及通道上的传输概率进行评估。通过利用催化金属基栅电极功函数的变化,所提出的传感器证明了对氧气(O2)和氢气(H2)等重要气体的有效检测。我们的研究结果表明,WS2-Si异质结在O2检测方面的峰值灵敏度为104,而MoTe2-Si在H2检测方面表现出优异的线性特性,尽管所有异质结的灵敏度相似。这些结果表明了该传感器在未来应用中集成到紧凑型传感集成电路(ic)中的潜力。
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来源期刊
Silicon
Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
5.90
自引率
20.60%
发文量
685
审稿时长
>12 weeks
期刊介绍: The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
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