γ-ray irradiation effect on the electrical transport properties of Cu films

IF 1.7 4区物理与天体物理 Q3 PHYSICS, CONDENSED MATTER

The European Physical Journal B Pub Date : 2025-07-01 DOI:10.1140/epjb/s10051-025-00966-7

Zhaoguo Li, Dawei Yan, Zhiqiang Zhan, Jiangshan Luo, Zhiqing Wu, Fan Lei, Yudan He, Lei Jin, Bo Yang, Qiubo Fu

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Abstract

We reported the electrical transport properties of Cu films under γ-ray irradiation. The temperature dependence of resistance curves coincides with each other before and after irradiation when the irradiation dose is \(\lesssim 3.6\times {10}^{6} \text{rad}(\text{Si})\). The resistance of the irradiated Cu film is greater than that of the non-irradiated film across the whole temperature range when the irradiation dose is \(\gtrsim 3.6\times {10}^{7} \text{rad}(\text{Si})\). This phenomenon is caused by the enhanced surface oxidation effect induced by γ-ray irradiation, and this mechanism has been confirmed by chemical composition analysis. Furthermore, the electrical transport properties of Cu films with and without polyimide coverage were measured during γ-ray irradiation. The experimental results showed that the bare Cu film undergoes surface oxidation, while the Cu film covered by polyimide does not. These results further validate the γ-irradiation enhanced oxidation mechanism in Cu films.

Graphical abstract

The resistance of the irradiated Cu film greater than that of the non-irradiated film was observed in the whole temperature range when irradiation dose is larger than a critical dose. The physical mechanism of above phenomenon is ascribed to the enhanced surface oxidation effect induced by γ-ray irradiation. The electrical transport properties of Cu films with and without polyimide coverage were also measured during γ-ray irradiation. The experimental results showed that the bare Cu film undergoes surface oxidation, while the Cu film covered by polyimide does not. These results further validate the γ-irradiation enhanced oxidation mechanism in Cu films.

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γ射线辐照对Cu薄膜电输运特性的影响

报道了Cu薄膜在γ射线辐照下的电输运性质。当辐照剂量为\(\lesssim 3.6\times {10}^{6} \text{rad}(\text{Si})\)时，辐照前后电阻曲线的温度依赖性基本一致。当辐照剂量为\(\gtrsim 3.6\times {10}^{7} \text{rad}(\text{Si})\)时，辐照Cu膜的电阻在整个温度范围内均大于未辐照Cu膜的电阻。这一现象是由γ射线辐照引起的表面氧化效应增强引起的，化学成分分析证实了这一机制。此外，在γ射线辐照下，测量了有聚酰亚胺覆盖和没有聚酰亚胺覆盖的Cu薄膜的电输运特性。实验结果表明，裸露的Cu膜发生了表面氧化，而聚酰亚胺覆盖的Cu膜没有发生表面氧化。这些结果进一步验证了γ辐射增强Cu膜氧化机理。当辐照剂量大于某一临界剂量时，辐照后的Cu膜在整个温度范围内的电阻均大于未辐照的Cu膜。上述现象的物理机制归因于γ射线辐照引起的表面氧化效应增强。在γ射线辐照下，测量了有聚酰亚胺覆盖和没有聚酰亚胺覆盖的Cu薄膜的电输运特性。实验结果表明，裸露的Cu膜发生了表面氧化，而聚酰亚胺覆盖的Cu膜没有发生表面氧化。这些结果进一步验证了γ辐射增强Cu膜氧化机理。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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