Dislocation Introduction via Domain Engineering in Mg2Sn Single Crystal to Improve its Thermoelectric Properties (Small Methods 9/2025)

Abstract

Thermoelectric Materials

In article number 2500385, Hayashi and co-workers proposed domain engineering for developing high-performance thermoelectric materials. Mg vacancies introduced into Mg₂Sn single crystals formed nanoparticle-like domains, around which dislocations were located. The boron doping varied the size and density of the domains and increased the lattice defects. A higher performance than polycrystals was achieved for n-type and p-type Mg₂Sn single crystals through decoupling carrier-phonon transport.