Properties of Interface Structures Based on Oxidized Lead Selenide

IF 0.4 Q4 PHYSICS, CONDENSED MATTER

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2025-09-25 DOI:10.1134/S1027451025700910

N. A. Tulina, A. N. Rossolenko, I. M. Shmytko, I. Y. Borisenko, D. N. Borisenko, N. N. Kolesnikov

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Abstract

In this work, single-phase monocrystalline and thin-film samples of lead selenide have been synthesized. Methods have been developed for the creation of surface oxidized lead selenide with a conductivity different from that of the base PbSe. Using oxidized lead selenide as an interface, Ag/Pb₃OSeO₃/PbSe heterostructures were made, demonstrating stable memristive characteristics. The obtained heterojunctions were investigated for the detection of resistive switching, and the volt -ampere characteristics and the temperature dependence of the resistance of the structures were measured. By changing the external parameters—frequency and magnitude of the electric field voltage applied to the heterocontact—different metastable states were realized. Dynamic effects were studied, and the transition times from one to another metastable state were determined. Single crystal-based memristors were more stable than film structures: reproducible characteristics in single crystal-based memristors were observed for several months.

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氧化硒化铅的界面结构性质

本文合成了硒化铅的单相单晶和薄膜样品。已经开发了制造具有不同于碱性硒化铅电导率的表面氧化硒化铅的方法。以氧化硒化铅为界面，制备出具有稳定记忆电阻特性的Ag/Pb3OSeO3/PbSe异质结构。对所得异质结进行了电阻开关检测，并测量了结构的伏安特性和电阻对温度的依赖关系。通过改变外加电场电压的频率和大小等外部参数，可以实现不同的亚稳态。研究了动态效应，确定了从一个亚稳态到另一个亚稳态的跃迁时间。单晶基忆阻器比薄膜结构更稳定：在几个月的时间里，我们观察到了单晶基忆阻器的可重复特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques PHYSICS, CONDENSED MATTER-

CiteScore

0.90

自引率

25.00%

发文量

144

审稿时长

3-8 weeks

期刊介绍： Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques publishes original articles on the topical problems of solid-state physics, materials science, experimental techniques, condensed media, nanostructures, surfaces of thin films, and phase boundaries: geometric and energetical structures of surfaces, the methods of computer simulations; physical and chemical properties and their changes upon radiation and other treatments; the methods of studies of films and surface layers of crystals (XRD, XPS, synchrotron radiation, neutron and electron diffraction, electron microscopic, scanning tunneling microscopic, atomic force microscopic studies, and other methods that provide data on the surfaces and thin films). Articles related to the methods and technics of structure studies are the focus of the journal. The journal accepts manuscripts of regular articles and reviews in English or Russian language from authors of all countries. All manuscripts are peer-reviewed.