Nonvolatile resistance switching in h-BN by van der Waals ferroelectric engineering

IF 3.6 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2025-09-23 DOI:10.1063/5.0283383

Jincheng Liu, Chun-Sheng Liu, Wei Xiao, Weiyang Wang, Xiaohong Zheng

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引用次数: 0

Abstract

The metallization of hexagonal boron nitride (h-BN) monolayer with a wide bandgap is crucial for unlocking its potential in various fields. Although carrier doping is the most straightforward way for achieving metallization, and it can be realized by interlayer charge transfer in a van der Waals (vdW) heterostructure constructed with another two-dimensional material, current attempts such as graphene/h-BN and α-In2Se3/h-BN vdW heterostructures fail in the h-BN metallization. In this work, a vdW heterostructure of graphene/α-In2Se3/h− BN is proposed. Interestingly, with the negative (positive) charge side of α-In2Se3 interfacing with h-BN (graphene), the polarization field of α-In2Se3 pushes the valence band of h-BN to higher energy and the Dirac point of graphene to lower energy so that charge transfer mediated by α-In2Se3 from h-BN to graphene becomes possible, driving h-BN to be metallic. In contrast, with the reversal of the ferroelectric polarization of α-In2Se3, no charge transfer from or to h-BN is allowed, and h-BN recovers its insulating feature. The nonvolatile resistance switching of h-BN by the graphene/In2Se3/h-BN vdW heterostructure will promote its practical applications, such as memory devices.

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范德华铁电工程中h-BN的非挥发性电阻开关

具有宽带隙的六方氮化硼（h-BN）单层金属化对于释放其在各个领域的潜力至关重要。虽然载流子掺杂是实现金属化最直接的方法，并且可以通过用另一种二维材料构建的范德华（vdW）异质结构中的层间电荷转移来实现，但目前的尝试如石墨烯/h-BN和α-In2Se3/h-BN vdW异质结构在h-BN金属化中失败。本文提出了石墨烯/α-In2Se3/h−BN的vdW异质结构。有趣的是，当α-In2Se3的负（正）电荷侧与h-BN（石墨烯）界面时，α-In2Se3的极化场推动h-BN的价带向高能，推动石墨烯的狄拉克点向低能，从而使得α-In2Se3介导的电荷从h-BN向石墨烯转移成为可能，驱动h-BN具有金属性质。相反，随着α-In2Se3铁电极化的逆转，不允许电荷从h-BN转移或向h-BN转移，h-BN恢复其绝缘特性。利用石墨烯/In2Se3/h-BN vdW异质结构实现h-BN的非易失性电阻开关，将促进其在存储器件等方面的实际应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.