Tungsten Oxide-Based Thin Films Prepared by Physical Vapor Deposition Techniques for Photoelectrochemical Water Splitting: A Review.

IF 3.3 3区 化学 Q2 CHEMISTRY, MULTIDISCIPLINARY
Muhammed L Fatty, Budur A Almabadi, Abuzar Khan, Badriah Sultan, Qasem A Drmosh
{"title":"Tungsten Oxide-Based Thin Films Prepared by Physical Vapor Deposition Techniques for Photoelectrochemical Water Splitting: A Review.","authors":"Muhammed L Fatty, Budur A Almabadi, Abuzar Khan, Badriah Sultan, Qasem A Drmosh","doi":"10.1002/asia.70317","DOIUrl":null,"url":null,"abstract":"<p><p>The global energy demand has raised concerns about environmental sustainability and economic stability. This has led to significant efforts to identify renewable and green energy sources. Hydrogen production through the water splitting reaction offers a promising pathway, since it yields hydrogen and oxygen as by-products. The photoelectrochemical technique has emerged as one of the effective methods for water splitting, offering vast potential for hydrogen production on a large scale. Among the various semiconductor photoelectrodes, tungsten oxide (WO<sub>3</sub>) has attracted considerable attention due to its suitable band gap, good chemical stability, and strong absorption in the visible region. This review addresses the fabrication of WO<sub>3</sub>-based thin films prepared using physical vapor deposition (PVD) techniques, including thermal evaporation, sputtering, pulsed laser deposition (PLD), and electron-beam evaporation. Reported studies highlight that sputtered WO<sub>3</sub> films often achieve high photocurrent densities and improved crystallinity, while PLD enables precise control over stoichiometry and nanostructure. Nevertheless, key challenges persist, such as controlling stoichiometry and phase stability, charge-carrier recombination, limited light absorption due to the wide band gap, low conductivity, and structural defects. The review concludes strategies to overcome these limitations, such as conducting thermal and electron-beam evaporation, combining CVD and PVD techniques, and optimizing sputtering conditions.</p>","PeriodicalId":145,"journal":{"name":"Chemistry - An Asian Journal","volume":" ","pages":"e70317"},"PeriodicalIF":3.3000,"publicationDate":"2025-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chemistry - An Asian Journal","FirstCategoryId":"1","ListUrlMain":"https://doi.org/10.1002/asia.70317","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

The global energy demand has raised concerns about environmental sustainability and economic stability. This has led to significant efforts to identify renewable and green energy sources. Hydrogen production through the water splitting reaction offers a promising pathway, since it yields hydrogen and oxygen as by-products. The photoelectrochemical technique has emerged as one of the effective methods for water splitting, offering vast potential for hydrogen production on a large scale. Among the various semiconductor photoelectrodes, tungsten oxide (WO3) has attracted considerable attention due to its suitable band gap, good chemical stability, and strong absorption in the visible region. This review addresses the fabrication of WO3-based thin films prepared using physical vapor deposition (PVD) techniques, including thermal evaporation, sputtering, pulsed laser deposition (PLD), and electron-beam evaporation. Reported studies highlight that sputtered WO3 films often achieve high photocurrent densities and improved crystallinity, while PLD enables precise control over stoichiometry and nanostructure. Nevertheless, key challenges persist, such as controlling stoichiometry and phase stability, charge-carrier recombination, limited light absorption due to the wide band gap, low conductivity, and structural defects. The review concludes strategies to overcome these limitations, such as conducting thermal and electron-beam evaporation, combining CVD and PVD techniques, and optimizing sputtering conditions.

物理气相沉积法制备用于光电化学水分解的氧化钨基薄膜研究进展。
全球能源需求引发了人们对环境可持续性和经济稳定性的担忧。这导致了确定可再生能源和绿色能源的重大努力。通过水裂解反应制氢提供了一个很有前途的途径,因为它产生氢和氧作为副产物。光电化学技术已成为一种有效的水分解方法,为大规模制氢提供了巨大的潜力。在各种半导体光电极中,氧化钨(WO3)因其合适的带隙、良好的化学稳定性和在可见光区的强吸收而备受关注。本文综述了利用物理气相沉积(PVD)技术制备wo3基薄膜的方法,包括热蒸发、溅射、脉冲激光沉积(PLD)和电子束蒸发。已有的研究表明,溅射WO3薄膜通常可以获得高光电流密度和改善的结晶度,而PLD可以精确控制化学计量和纳米结构。然而,关键的挑战仍然存在,例如控制化学计量和相稳定性,电荷载流子重组,由于宽带隙,低电导率和结构缺陷导致的光吸收有限。本文总结了克服这些限制的策略,如进行热和电子束蒸发,结合CVD和PVD技术,以及优化溅射条件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Chemistry - An Asian Journal
Chemistry - An Asian Journal 化学-化学综合
CiteScore
7.00
自引率
2.40%
发文量
535
审稿时长
1.3 months
期刊介绍: Chemistry—An Asian Journal is an international high-impact journal for chemistry in its broadest sense. The journal covers all aspects of chemistry from biochemistry through organic and inorganic chemistry to physical chemistry, including interdisciplinary topics. Chemistry—An Asian Journal publishes Full Papers, Communications, and Focus Reviews. A professional editorial team headed by Dr. Theresa Kueckmann and an Editorial Board (headed by Professor Susumu Kitagawa) ensure the highest quality of the peer-review process, the contents and the production of the journal. Chemistry—An Asian Journal is published on behalf of the Asian Chemical Editorial Society (ACES), an association of numerous Asian chemical societies, and supported by the Gesellschaft Deutscher Chemiker (GDCh, German Chemical Society), ChemPubSoc Europe, and the Federation of Asian Chemical Societies (FACS).
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