Low-dimensional low-symmetric semiconductors for polarization-sensitive photodetection

Abstract

Optoelectronics has evolved from fundamental materials to multifunctional integrated systems, yet photon manipulation remains in its early stages. Low-dimensional low-symmetric (LDLS) semiconductors, with atomic thickness and structural anisotropy, enable multidimensional photodetection, including the intensity, wavelength and polarization. Despite success for on-chip integration, challenges in large-scale, high-quality material synthesis and array construction hinder their application in high-resolution focal-plane imaging. In this Perspective, we examine the development of LDLS semiconductors for polarization-sensitive photodetection, outlining the physics of their anisotropic photoresponse. We then discuss key obstacles to large-scale integration in optoelectronic circuits and explore potential solutions. Finally, we highlight research directions to advance the on-chip integration of low-dimensional optoelectronics. This Perspective explores one-dimensional (1D) and two-dimensional (2D) low-dimensional low-symmetric (LDLS) semiconductors for use in polarization-sensitive photodetectors, focusing on their material properties, scalability and commercial applications in imaging, communication, navigation and computing from single device level to complex multifunctional arrays.