2D bismuth oxyselenide semiconductor for future electronics

Abstract

The continuous downscaling of silicon transistors has driven exponential improvements in computing performance and energy efficiency, but sub-10 nm channel lengths pose fundamental challenges in speed and power consumption. Emerging materials and architectures offer promising pathways for further miniaturization. Bismuth oxyselenide (Bi2O2Se), an air-stable 2D semiconductor, exhibits high mobility, a suitable bandgap and a native high-κ oxide (Bi2SeO5), resembling silicon and its SiO2 counterpart. These properties suggest compatibility with industrial processes, positioning Bi2O2Se for next-generation high-performance computing. This Review summarizes recent advances in material synthesis, wafer-scale integration and device architectures, highlighting key challenges in the lab-to-fab transition. Finally, a roadmap is proposed to guide future innovations in ultra-scaled, energy-efficient electronics. This Review explores Bi2O2Se as a promising 2D semiconductor for next-generation computing, highlighting its high mobility, suitable bandgap and native high-κ oxide, which enables wafer-scale integration and compatibility with industrial processes, while addressing key challenges in the lab-to-fab transition and proposing a roadmap for ultra-scaled, energy-efficient electronics.