Dandan Zhang, Jianshun Li, Lei Wang, Yaqi Guo, Weipeng Liu, Qingli Lin, Lin Song Li, Huaibin Shen
{"title":"Nanoshell-driven carrier engineering of large quantum dots enables ultra-stable and efficient LEDs","authors":"Dandan Zhang, Jianshun Li, Lei Wang, Yaqi Guo, Weipeng Liu, Qingli Lin, Lin Song Li, Huaibin Shen","doi":"10.1007/s12274-024-6899-4","DOIUrl":null,"url":null,"abstract":"<div><p>Quantum dot (QD) light-emitting diodes (QLEDs) have been considered one of the most promising candidates for nextgeneration lighting and displays. However, the suboptimal carrier dynamics at the interface between QDs and the hole transport layer (HTL), such as leakage and quenching induced by the accumulation of electrons at high brightness, severely deteriorates the device’s efficiency and stability. Here, we introduced the influence of carrier modulation by nanoshell engineering on the extermal quantum efficiency (EQE) and operation lifetime for QLEDs with large-sized QDs. The shell-driven engineering of energy level positions and band bending effectively eliminates the hole injection barrier and promotes charge injection balance. Photo-assisted Kelvin probe technique reveals that the ZnCdSe/ZnSeS QD/TFB (TFB = poly(9,9-dioctylfluorene-co-N-(4-(3-methylpropyl))diphenylamine)) interface presents an increased surface potential and quasi-Fermi level splitting, reducing heat generation during device operation at high brightness. The shell-driven carrier engineering strategy reveals that our devices exhibit a high external quantum efficiency of 26.44% and an ultralong operation time (exceeding 50,000 h) to 95% of the initial luminance at 1000 cd/m<sup>2</sup> (<i>T</i><sub>95</sub>@1000 cd/m<sup>2</sup>). We anticipate that our results provide insights into resolving the issues at the QDHTL interface and demonstrate the importance of carrier management driven by QD nanostructure tailoring for the commercialization of QLEDs.\n</p><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":713,"journal":{"name":"Nano Research","volume":"17 :","pages":"10453 - 10459"},"PeriodicalIF":9.0000,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano Research","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12274-024-6899-4","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
Quantum dot (QD) light-emitting diodes (QLEDs) have been considered one of the most promising candidates for nextgeneration lighting and displays. However, the suboptimal carrier dynamics at the interface between QDs and the hole transport layer (HTL), such as leakage and quenching induced by the accumulation of electrons at high brightness, severely deteriorates the device’s efficiency and stability. Here, we introduced the influence of carrier modulation by nanoshell engineering on the extermal quantum efficiency (EQE) and operation lifetime for QLEDs with large-sized QDs. The shell-driven engineering of energy level positions and band bending effectively eliminates the hole injection barrier and promotes charge injection balance. Photo-assisted Kelvin probe technique reveals that the ZnCdSe/ZnSeS QD/TFB (TFB = poly(9,9-dioctylfluorene-co-N-(4-(3-methylpropyl))diphenylamine)) interface presents an increased surface potential and quasi-Fermi level splitting, reducing heat generation during device operation at high brightness. The shell-driven carrier engineering strategy reveals that our devices exhibit a high external quantum efficiency of 26.44% and an ultralong operation time (exceeding 50,000 h) to 95% of the initial luminance at 1000 cd/m2 (T95@1000 cd/m2). We anticipate that our results provide insights into resolving the issues at the QDHTL interface and demonstrate the importance of carrier management driven by QD nanostructure tailoring for the commercialization of QLEDs.
期刊介绍:
Nano Research is a peer-reviewed, international and interdisciplinary research journal that focuses on all aspects of nanoscience and nanotechnology. It solicits submissions in various topical areas, from basic aspects of nanoscale materials to practical applications. The journal publishes articles on synthesis, characterization, and manipulation of nanomaterials; nanoscale physics, electrical transport, and quantum physics; scanning probe microscopy and spectroscopy; nanofluidics; nanosensors; nanoelectronics and molecular electronics; nano-optics, nano-optoelectronics, and nano-photonics; nanomagnetics; nanobiotechnology and nanomedicine; and nanoscale modeling and simulations. Nano Research offers readers a combination of authoritative and comprehensive Reviews, original cutting-edge research in Communication and Full Paper formats. The journal also prioritizes rapid review to ensure prompt publication.