{"title":"PheOptimizing optical and electrical properties of Cu-doped MoO3 thin films for photodiode applications","authors":"M. Ataei, M.R. Fadavieslam","doi":"10.1016/j.optmat.2025.117536","DOIUrl":null,"url":null,"abstract":"<div><div>In this study, MoO3:Cu thin films with varying Cu concentrations (0, 3, 6, 9 wt%) were deposited on p-type Si using spray pyrolysis to fabricate p-n junction diodes. XRD analysis showed increased crystallinity and grain size with Cu doping up to 6 wt%. FESEM images revealed heterogeneous rectangular particles, while AFM indicated increasing surface roughness with higher Cu concentrations. The grain sizes were 181, 183, 184, and 119 nm for 0, 3, 6, and 9 wt%, respectively. EDX confirmed the elemental composition without impurities. Optical characterization showed the bandgap narrowing from 2.89 to 2.56 eV, with the minimum at 6 wt% Cu. PL spectra displayed a red shift in emission, indicating changes in defect concentration. J-V measurements demonstrated a reduction in the ideality factor (n = 3.13) and barrier height (Φb = 0.65) at 6 wt%, leading to improved diode characteristics, enhanced photoresponse, and faster response times.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"169 ","pages":"Article 117536"},"PeriodicalIF":4.2000,"publicationDate":"2025-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0925346725008961","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
In this study, MoO3:Cu thin films with varying Cu concentrations (0, 3, 6, 9 wt%) were deposited on p-type Si using spray pyrolysis to fabricate p-n junction diodes. XRD analysis showed increased crystallinity and grain size with Cu doping up to 6 wt%. FESEM images revealed heterogeneous rectangular particles, while AFM indicated increasing surface roughness with higher Cu concentrations. The grain sizes were 181, 183, 184, and 119 nm for 0, 3, 6, and 9 wt%, respectively. EDX confirmed the elemental composition without impurities. Optical characterization showed the bandgap narrowing from 2.89 to 2.56 eV, with the minimum at 6 wt% Cu. PL spectra displayed a red shift in emission, indicating changes in defect concentration. J-V measurements demonstrated a reduction in the ideality factor (n = 3.13) and barrier height (Φb = 0.65) at 6 wt%, leading to improved diode characteristics, enhanced photoresponse, and faster response times.
期刊介绍:
Optical Materials has an open access mirror journal Optical Materials: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review.
The purpose of Optical Materials is to provide a means of communication and technology transfer between researchers who are interested in materials for potential device applications. The journal publishes original papers and review articles on the design, synthesis, characterisation and applications of optical materials.
OPTICAL MATERIALS focuses on:
• Optical Properties of Material Systems;
• The Materials Aspects of Optical Phenomena;
• The Materials Aspects of Devices and Applications.
Authors can submit separate research elements describing their data to Data in Brief and methods to Methods X.