Growth and characterization of Ir3Se8 thin films via chemical vapor deposition for NIR photodetector and gas sensor applications

IF 6.3 2区材料科学 Q2 CHEMISTRY, PHYSICAL

Surfaces and Interfaces Pub Date : 2025-09-21 DOI:10.1016/j.surfin.2025.107729

Jaehyeok Kim , Minji Kim , Inkyu Sohn , Jisang Yoo , Taehyun Kim , Chanju Lee , Yusuke Ohshima , Shinichi Kato , Tatsuya Nakazawa , Hyungjun Kim

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引用次数: 0

Abstract

Platinum-group metal chalcogenides exhibit significant potential for electronic and optoelectronic applications due to their promising semiconducting properties. However, the growth of iridium chalcogenides remains underdeveloped, mainly due to challenges such as the limited availability of suitable precursors, difficulties in achieving precise stoichiometric control, and the complexity of their crystallization processes. In this work, we present the first successful synthesis of Ir₃Se₈ thin films via chemical vapor deposition (CVD) using a novel iridium precursor, tricarbonyl (1,2,3-η)-1,2,3-tri(tert-butyl)-cyclopropenyl iridium (TICP), with Se powder. The films were deposited at temperatures ranging from 300 to 500°C, and structural analysis revealed that 300°C is the optimal growth temperature for obtaining high-quality, stoichiometric Ir₃Se₈ films. Optical characterization of Ir₃Se₈ using UV-Vis-NIR spectroscopy determined the bandgap to be 0.67 eV, confirming its semiconducting nature. Additionally, metal-semiconductor-metal (MSM) devices fabricated with the synthesized Ir₃Se₈ films demonstrated stable near-infrared (NIR) photoresponse. Furthermore, gas sensor measurements exhibited a high response of 640% and a recovery rate of 97% for NO₂ detection at room temperature. This study provides a novel approach for the low-temperature synthesis of Ir₃Se₈ and highlights its potential in optoelectronic and gas sensing applications.

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用于近红外光电探测器和气体传感器的化学气相沉积Ir3Se8薄膜的生长和表征

铂族金属硫族化合物具有良好的半导体特性，在电子和光电子领域具有重要的应用潜力。然而，硫属铱的生长仍然不发达，主要是由于诸如合适的前体有限的可用性，难以实现精确的化学计量控制以及其结晶过程的复杂性等挑战。在这项工作中，我们首次通过化学气相沉积（CVD）成功合成了Ir3Se8薄膜，使用了一种新的铱前驱体，三羰基(1,2,3-η)-1,2,3-三（叔丁基）-环丙烯铱（TICP）和Se粉。薄膜在300 ~ 500℃的温度下沉积，结构分析表明300℃是获得高质量、化学计量的Ir3Se8薄膜的最佳生长温度。利用紫外-可见-近红外光谱对Ir3Se8进行光学表征，确定其带隙为0.67 eV，证实了其半导体性质。此外，用合成的Ir3Se8薄膜制备的金属-半导体-金属（MSM）器件表现出稳定的近红外（NIR）光响应。此外，在室温下，气体传感器测量的NO₂检测具有640%的高响应和97%的回收率。该研究为低温合成Ir3Se8提供了一种新方法，并突出了其在光电和气敏应用中的潜力。

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来源期刊

Surfaces and Interfaces Chemistry-General Chemistry

CiteScore

8.50

自引率

6.50%

发文量

753

审稿时长

35 days

期刊介绍： The aim of the journal is to provide a respectful outlet for ''sound science'' papers in all research areas on surfaces and interfaces. We define sound science papers as papers that describe new and well-executed research, but that do not necessarily provide brand new insights or are merely a description of research results. Surfaces and Interfaces publishes research papers in all fields of surface science which may not always find the right home on first submission to our Elsevier sister journals (Applied Surface, Surface and Coatings Technology, Thin Solid Films)