Voltage-Induced Hysteretic Resistance in Nematic Order of SmFeAsO

IF 13.7 Q1 CHEMISTRY, MULTIDISCIPLINARY
Zhiyue Li, Wanshun Du, Lingzhe Liao, Ziqing Sun, Zhuorui Zhang, Tianyue Wen, Zhekai Zhang, Wei Tao, Tingyong Chen
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引用次数: 0

Abstract

Point-contact spectroscopy has been utilized to study SmFeAsO, the parent compound of the “1111” iron superconductors. A bias voltage drives the point contact through antiferromagnetic and structural transitions via the ballistic Joule heating effect. Surprisingly, the bias voltage also induces a hysteretic conductance only in the temperature range of the nematic order, while there is no such behavior in the temperature-dependent resistance. The larger the maximum bias voltage, the bigger the conductance changes in the hysteresis, but always exclusively in the nematic order regime. The voltage-driven conductance hysteresis, which is not affected by a magnetic field of 5 T, suggests the nematic order in the SmFeAsO sample may be from an electronic origin and can be controlled by a voltage.

Abstract Image

SmFeAsO的向列阶电压感应滞回电阻
利用点接触光谱法研究了“1111”铁超导体的母体化合物SmFeAsO。偏置电压通过弹道焦耳热效应通过反铁磁和结构转变驱动点接触。令人惊讶的是,偏置电压也只在向列数量级的温度范围内引起滞后电导,而在温度相关电阻中则没有这种行为。最大偏置电压越大,磁滞的电导变化越大,但总是只在向列阶区。电压驱动的电导迟滞不受5t磁场的影响,表明SmFeAsO样品中的向列序可能来自电子来源,可以由电压控制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
17.40
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