{"title":"Preparation and gas sensing performance of MXene (Ti3C2Tx)","authors":"Chenwei Zhang , Lijun Qian , Wen Zeng","doi":"10.1016/j.sna.2025.117068","DOIUrl":null,"url":null,"abstract":"<div><div>This study employed potassium hydroxide (KOH) alkaline treatment and inert gas annealing to fabricate Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> materials featuring enriched oxygen-containing functional groups and large interlayer spacing. The microstructure was characterized using scanning electron microscopy (SEM) and X-ray diffraction (XRD), with systematic investigation of gas-sensing properties and underlying mechanisms. Results indicate that alkaline treatment significantly enlarged the interlayer spacing from 9.1 Å to 12.8 Å while moderately increasing the O/F ratio. Subsequent annealing maintained the enlarged interlayer spacing (12.1 Å) while substantially elevating the O/F ratio to 21.29. The optimized material exhibited a 35.7 % response to 200 ppm NH<sub>3</sub> - representing a 91 % enhancement over pristine Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub>—alongside a reduced response time (170 s). Mechanistic analysis reveals that the increased density of surface oxygen-functional groups (-OH, =O) coupled with expanded interlayer spacing critically enhanced gas-sensing performance. This work provides an effective strategy for designing high-performance single-component MXene-based gas sensors.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"395 ","pages":"Article 117068"},"PeriodicalIF":4.9000,"publicationDate":"2025-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sensors and Actuators A-physical","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S092442472500874X","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This study employed potassium hydroxide (KOH) alkaline treatment and inert gas annealing to fabricate Ti3C2Tx materials featuring enriched oxygen-containing functional groups and large interlayer spacing. The microstructure was characterized using scanning electron microscopy (SEM) and X-ray diffraction (XRD), with systematic investigation of gas-sensing properties and underlying mechanisms. Results indicate that alkaline treatment significantly enlarged the interlayer spacing from 9.1 Å to 12.8 Å while moderately increasing the O/F ratio. Subsequent annealing maintained the enlarged interlayer spacing (12.1 Å) while substantially elevating the O/F ratio to 21.29. The optimized material exhibited a 35.7 % response to 200 ppm NH3 - representing a 91 % enhancement over pristine Ti3C2Tx—alongside a reduced response time (170 s). Mechanistic analysis reveals that the increased density of surface oxygen-functional groups (-OH, =O) coupled with expanded interlayer spacing critically enhanced gas-sensing performance. This work provides an effective strategy for designing high-performance single-component MXene-based gas sensors.
期刊介绍:
Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:
• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.
• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.
• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.
• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.
Etc...