Acceleration of the chemical delamination of Ti3AlC2 crystals in the presence of chloroauric acid with the formation of 2D MXenes

IF 4.6 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering: B Pub Date : 2025-09-19 DOI:10.1016/j.mseb.2025.118811

A.V. Parfeneva, V.P. Ulin, E.K. Khrapova, M.V. Tomkovich, G.V. Li, A.M. Rumyantsev, D.A. Kirilenko, E.V. Beregulin, A.A. Krasilin, E.V. Astrova

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Abstract

A method for accelerated synthesis of 2D MXenes Ti₃C₂T_x from the MAX phase Ti₃AlC₂ by selective etching of Al in acidic fluoride-contained solutions in the presence of HAuCl₄ as a catalyst is proposed. The results of characterization of the etching products using scanning and transmission electron microscopy, X-ray diffraction analysis, energy-dispersive X-ray spectroscopy and 4-probe resistivity measurements are presented. It is shown that the introduction of HAuCl₄ into the etching solution increases the rate of aluminum removal from the precursor crystals and increases the efficiency of their separation into 2D layers. The mechanism of such acceleration is a transfer of the hydrogen gas release region from the distributed front of aluminum dissolution inside the crystal to the clusters of gold formed on its outer surfaces.

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氯金酸加速Ti3AlC2晶体化学分层，形成二维MXenes

提出了一种以HAuCl4为催化剂，在酸性含氟溶液中选择性蚀刻Al，以MAX相Ti3AlC2为原料加速合成二维MXenes Ti3C2Tx的方法。利用扫描电镜、透射电镜、x射线衍射分析、能量色散x射线能谱和四探针电阻率测量等方法对刻蚀产物进行了表征。结果表明，在蚀刻液中引入HAuCl4，提高了前驱体晶体中铝的去除率，提高了前驱体晶体分离成二维层的效率。这种加速的机制是氢气释放区从晶体内部铝溶解的分布前沿转移到其外表面形成的金团簇。

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来源期刊

Materials Science and Engineering: B 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.