Multifunctional Benzoxazine Resins Containing Biphenyl Structures: Synthesis, Characterization and Properties

IF 2.7 4区 化学 Q3 POLYMER SCIENCE
Yiqing Xia, Junlong Zhu, Yuping Sheng, Wilfred Emori, Renfei Zhang, Yuntao Zeng, Zhenggang Zhou, Chenghong Fu
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引用次数: 0

Abstract

In order to enhance the thermal stability and dielectric properties of benzoxazine resins, four biphenyl-containing polyaromatic amine-type benzoxazine resins (BOZ-P, BOZ-B, BOZ-A and BOZ-T) were prepared by molecular design in this paper, and the effects of the biphenyl structure and different substituents on the properties of benzoxazine resins were investigated. The results showed that the introduction of biphenyl structure effectively enhanced the thermal stability and dielectric properties of benzoxazine resins. Among them, the 5% thermal decomposition temperature of P(BOZ-P) was 411.4°C, the residual carbon rate was 58.6% at 800°C, the glass transition temperature was 194.5°C, the dielectric constant was 2.808 at 10 MHz, and the surface free energy was 39.95 mJ·m−2. P(BOZ-T), which was introduced with trifluoromethyl group, showed the best low dielectric properties, and the dielectric constant and dielectric loss at MHz are 2.698 and 0.00758, respectively.

Abstract Image

含联苯结构的多功能苯并恶嗪树脂:合成、表征及性能
为了提高苯并恶嗪树脂的热稳定性和介电性能,采用分子设计法制备了4种含联苯的聚芳胺型苯并恶嗪树脂(BOZ-P、BOZ-B、BOZ-A和BOZ-T),并研究了联苯结构和不同取代基对苯并恶嗪树脂性能的影响。结果表明,联苯结构的引入有效地提高了苯并恶嗪树脂的热稳定性和介电性能。其中,P(BOZ-P)的5%热分解温度为411.4℃,800℃时残碳率为58.6%,玻璃化转变温度为194.5℃,10 MHz时介电常数为2.808,表面自由能为39.95 mJ·m−2。加入三氟甲基的P(BOZ-T)表现出最好的低介电性能,在MHz下介电常数和介电损耗分别为2.698和0.00758。
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来源期刊
Macromolecular Chemistry and Physics
Macromolecular Chemistry and Physics 化学-高分子科学
CiteScore
4.30
自引率
4.00%
发文量
278
审稿时长
1.4 months
期刊介绍: Macromolecular Chemistry and Physics publishes in all areas of polymer science - from chemistry, physical chemistry, and physics of polymers to polymers in materials science. Beside an attractive mixture of high-quality Full Papers, Trends, and Highlights, the journal offers a unique article type dedicated to young scientists – Talent.
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