Near-infrared photodetector based on single-walled carbon nanotubes/Al2O3/In0.53Ga0.47As hetero-structure enhanced by silver nanoparticles

IF 3.4 3区物理与天体物理 Q2 INSTRUMENTS & INSTRUMENTATION

Infrared Physics & Technology Pub Date : 2025-09-13 DOI:10.1016/j.infrared.2025.106153

Hao Gu, Zixiang Weng, Jun Chen

{"title":"Near-infrared photodetector based on single-walled carbon nanotubes/Al2O3/In0.53Ga0.47As hetero-structure enhanced by silver nanoparticles","authors":"Hao Gu, Zixiang Weng, Jun Chen","doi":"10.1016/j.infrared.2025.106153","DOIUrl":null,"url":null,"abstract":"<div><div>As a kind of 1-D material, single-walled carbon nanotubes (SWCNTs) are extensively studied for application in near-infrared (NIR) photodetector due to their excellent infrared absorption, suitable bandgap and high charge carrier mobility. The combination of SWCNTs with bulk semiconductors has been demonstrated to exhibit a good photoelectric performance in the NIR region. This paper presents a NIR photodetector with silver nanoparticles (Ag NPs)/SWCNTs/Al<sub>2</sub>O<sub>3</sub>/In<sub>0.53</sub>Ga<sub>0.47</sub>As structure. The localized surface plasmon resonance (LSPR) caused by Ag NPs could enhance the light absorption of the photodetector. The Al<sub>2</sub>O<sub>3</sub> layer was inserted as the passivation layer in order to reduce the contact defects between SWCNTs and In<sub>0.53</sub>Ga<sub>0.47</sub>As. Under the 1064 nm incident light, the device exhibits a good optical response. The responsivity and detectivity are up to 244.1 mA/W and 1.49 × 10<sup>10</sup> Jones at −1V, respectively. In addition, the rise and fall time are 10 μs and 8 μs. Based on the excellent optoelectronic performance of the device, wireless optical communication in NIR region has been achieved. The results show the promising perspective and applications of the presented structure for NIR photodetection.</div></div>","PeriodicalId":13549,"journal":{"name":"Infrared Physics & Technology","volume":"151 ","pages":"Article 106153"},"PeriodicalIF":3.4000,"publicationDate":"2025-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Infrared Physics & Technology","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1350449525004463","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"INSTRUMENTS & INSTRUMENTATION","Score":null,"Total":0}

引用次数: 0

Abstract

As a kind of 1-D material, single-walled carbon nanotubes (SWCNTs) are extensively studied for application in near-infrared (NIR) photodetector due to their excellent infrared absorption, suitable bandgap and high charge carrier mobility. The combination of SWCNTs with bulk semiconductors has been demonstrated to exhibit a good photoelectric performance in the NIR region. This paper presents a NIR photodetector with silver nanoparticles (Ag NPs)/SWCNTs/Al₂O₃/In_0.53Ga_0.47As structure. The localized surface plasmon resonance (LSPR) caused by Ag NPs could enhance the light absorption of the photodetector. The Al₂O₃ layer was inserted as the passivation layer in order to reduce the contact defects between SWCNTs and In_0.53Ga_0.47As. Under the 1064 nm incident light, the device exhibits a good optical response. The responsivity and detectivity are up to 244.1 mA/W and 1.49 × 10¹⁰ Jones at −1V, respectively. In addition, the rise and fall time are 10 μs and 8 μs. Based on the excellent optoelectronic performance of the device, wireless optical communication in NIR region has been achieved. The results show the promising perspective and applications of the presented structure for NIR photodetection.

查看原文本刊更多论文

纳米银增强单壁碳纳米管/Al2O3/In0.53Ga0.47As异质结构近红外探测器

单壁碳纳米管（SWCNTs）作为一种一维材料，由于其优异的红外吸收性能、合适的带隙和高载流子迁移率，在近红外（NIR）光电探测器中得到了广泛的应用研究。SWCNTs与体块半导体的结合已被证明在近红外区域具有良好的光电性能。本文提出了一种具有银纳米粒子/SWCNTs/Al2O3/In0.53Ga0.47As结构的近红外光电探测器。银纳米粒子引起的局部表面等离子体共振（LSPR）可以增强光电探测器的光吸收。为了减少SWCNTs与In0.53Ga0.47As之间的接触缺陷，插入Al2O3层作为钝化层。在1064nm入射光下，器件表现出良好的光学响应。在−1V时的响应度和检出率分别高达244.1 mA/W和1.49 × 1010 Jones。上升时间为10 μs，下降时间为8 μs。基于该器件优异的光电性能，实现了近红外区域的无线光通信。结果表明该结构在近红外光探测中具有广阔的应用前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Infrared Physics & Technology 物理-光学

CiteScore

5.70

自引率

12.10%

发文量

400

审稿时长

67 days

期刊介绍： The Journal covers the entire field of infrared physics and technology: theory, experiment, application, devices and instrumentation. Infrared'' is defined as covering the near, mid and far infrared (terahertz) regions from 0.75um (750nm) to 1mm (300GHz.) Submissions in the 300GHz to 100GHz region may be accepted at the editors discretion if their content is relevant to shorter wavelengths. Submissions must be primarily concerned with and directly relevant to this spectral region. Its core topics can be summarized as the generation, propagation and detection, of infrared radiation; the associated optics, materials and devices; and its use in all fields of science, industry, engineering and medicine. Infrared techniques occur in many different fields, notably spectroscopy and interferometry; material characterization and processing; atmospheric physics, astronomy and space research. Scientific aspects include lasers, quantum optics, quantum electronics, image processing and semiconductor physics. Some important applications are medical diagnostics and treatment, industrial inspection and environmental monitoring.