Study on the Morphology and Luminescence Properties of InGaAs/GaAs Heterojunction Nanowires under Synergistic Regulation of V/III Ratio and Growth Time

Abstract

The InGaAs/GaAs heterojunction nanowires on GaAs (111B) substrates were successfully fabricated using the metal–organic chemical vapor deposition (MOCVD) technique, which is based on the vapor–liquid–solid (VLS) growth mechanism. The synergistic effects of these parameters on the morphology and luminescence properties of the InGaAs/GaAs heterojunction nanowires were revealed by systematically adjusting the V/III ratio (ranging from 40 to 80) and the growth time (from 600 to 900 s). When the V/III ratio reached 60, an optimal synergistic effect was observed, resulting in uniform columnar nanowires. Additionally, the luminescence intensity was significantly enhanced when the growth duration was extended to 900 s. Systematic theoretical and experimental studies were performed upon the luminescence mechanism, which primarily arises from radiative recombination, with the peak position exhibiting a redshift as growth time increases, and the dynamics of carrier recombination were further analyzed. The results revealed that the enhancement in the uniformity of the indium (In) content distribution was a crucial factor in improving luminescence performance. A synergistic control model that links the V/III ratio and growth time was presented, providing fundamental guidance for optimizing fabrication processes in advanced infrared detectors and quantum communication systems. Consequently, this research advances the practical application of III–V nanowire optoelectronic devices.