Donor and Acceptor Characteristics of Group IV and VII Doped BiNbO4: A Hybrid Density Functional Investigation

IF 3.9 2区 化学 Q2 CHEMISTRY, MULTIDISCIPLINARY
Hongchun Zheng, , , Song Ling, , , Bo Kong*, , , Tixian Zeng*, , , Shan Jiang, , and , Wentao Wang*, 
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引用次数: 0

Abstract

This work systematically investigates the intrinsic defect behavior and corresponding conductivity type of BiNbO4 under different representative thermodynamic equilibrium growth conditions using hybrid density functional theory calculations. The modulation effects of group IVB (Ti, Zr, and Hf) and group VIIA (F, Cl, Br, and I) element doping on its conductivity and electronic and optical properties are also explored. It is revealed that, under Bi-rich, relatively Nb-rich, and O-poor conditions, the easy ionization of the main native defects VO1 (two O vacancy types), NbBi, and unintentional Hi as shallow donors promotes BiNbO4 to exhibit an unintentional n-type conductivity character. Still, under O-rich, Bi-poor, and Nb-poor conditions, the ionization of the dominant defects VBi as excellent acceptors makes it present an intrinsic p-type behavior. Therefore, this affirms the experimental observation of the n-type character in BiNbO4 and predicts its p-type behavior. For extrinsic doping, the substitution of Ti on Nb (TiNb1–) significantly enhances the p-type conductivity under the presence of O-rich conditions. Ti becomes the best p-type doping candidate for BiNbO4 among the group IVB elements. In contrast, the substitution of F on O (FO1+) effectively boosts the superior n-type conductivity under the O-poor conditions, and F is the best n-type doping candidate among group VIIA elements. Furthermore, the electronic structure and optical absorption analyses indicate that the major intrinsic defects VO11+, VO12+, and VBi3– and the optimal extrinsic doping TiNb1– and FO1+ do not lead to deep-level recombination centers but instead serve as active sites for photocatalytic reactions, synergistically improving visible-light absorption and charge carrier concentration. In addition, it is found that interstitial Nbi and an O2 vacancy defects respectively induce significant visible light absorption, especially for Nbi. Thus, via the control of growth conditions and the optimization of doping elements, this study provides theoretical guidance on the intrinsic and extrinsic doping strategies for tuning the conductivity and other properties, further enhancing the photocatalytic performance of BiNbO4.

Abstract Image

Abstract Image

IV族和VII族掺杂BiNbO4的供体和受体特性:杂化密度泛函研究
本文采用混合密度泛函理论计算,系统地研究了BiNbO4在不同具有代表性的热力学平衡生长条件下的内在缺陷行为和相应的电导率类型。探讨了IVB族(Ti、Zr和Hf)和VIIA族(F、Cl、Br和I)元素掺杂对其电导率和电子光学性能的调制作用。结果表明,在富bi、相对富nb和贫O条件下,主要天然缺陷VO1(两种O空位类型)、NbBi和无意Hi作为浅给体容易电离,促使BiNbO4表现出无意n型电导率特征。然而,在富o,贫bi和贫nb条件下,优势缺陷VBi作为优秀受体的电离使其呈现固有的p型行为。因此,这肯定了BiNbO4中n型特性的实验观察,并预测了它的p型行为。对于外源掺杂,在富o条件下,Ti取代Nb (TiNb1 -)显著提高了p型电导率。在IVB族元素中,Ti成为BiNbO4的最佳p型掺杂候选者。相反,在O-贫条件下,F在O (FO1+)上的取代有效地提高了优异的n型电导率,F是VIIA族元素中n型掺杂的最佳候选。此外,电子结构和光吸收分析表明,主要的内在缺陷VO11+, VO12+和VBi3 -以及最佳的外源掺杂TiNb1 -和FO1+不会导致深层重组中心,而是作为光催化反应的活性位点,协同提高可见光吸收和载流子浓度。此外,还发现间隙性Nbi和O2空位缺陷分别诱导了显著的可见光吸收,特别是对Nbi。因此,本研究通过对生长条件的控制和掺杂元素的优化,为调整BiNbO4的电导率等性能提供了内在和外在掺杂策略的理论指导,进一步提高BiNbO4的光催化性能。
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来源期刊
Langmuir
Langmuir 化学-材料科学:综合
CiteScore
6.50
自引率
10.30%
发文量
1464
审稿时长
2.1 months
期刊介绍: Langmuir is an interdisciplinary journal publishing articles in the following subject categories: Colloids: surfactants and self-assembly, dispersions, emulsions, foams Interfaces: adsorption, reactions, films, forces Biological Interfaces: biocolloids, biomolecular and biomimetic materials Materials: nano- and mesostructured materials, polymers, gels, liquid crystals Electrochemistry: interfacial charge transfer, charge transport, electrocatalysis, electrokinetic phenomena, bioelectrochemistry Devices and Applications: sensors, fluidics, patterning, catalysis, photonic crystals However, when high-impact, original work is submitted that does not fit within the above categories, decisions to accept or decline such papers will be based on one criteria: What Would Irving Do? Langmuir ranks #2 in citations out of 136 journals in the category of Physical Chemistry with 113,157 total citations. The journal received an Impact Factor of 4.384*. This journal is also indexed in the categories of Materials Science (ranked #1) and Multidisciplinary Chemistry (ranked #5).
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