Ethan Benderly-Kremen, Katrin Daehn, Antoine Allanore
{"title":"Gallium and Indium Selective Sulfidation and Vapor Phase Transport from e-Waste Feedstocks","authors":"Ethan Benderly-Kremen, Katrin Daehn, Antoine Allanore","doi":"10.1007/s11837-025-07623-5","DOIUrl":null,"url":null,"abstract":"<div><p>Gallium (Ga) and indium (In) share similarities in their chemical behavior, their dilute presence in waste electronics (e-waste), and recycling rates close to 0% from such streams. Designing processes to extract gallium from LED chips and indium from LCD screens simultaneously reveals the potential and necessary distinctions for a flexible process based on elemental sulfur reactivity, which can be applied to both feedstocks. Whereas Ga- and In-compounds found in e-waste (gallium nitride, GaN; indium tin oxide, ‘ITO’) are recalcitrant to dissolution in aqueous feedstocks, the reaction with sulfur gas to form volatile sulfides may support their selective extraction from prepared e-waste. Process conditions for selective sulfidation are herein informed from thermodynamics and demonstrated experimentally. Vapor phase transport of the volatile sulfides is a powerful means to collect and enrich gallium and indium. Practical implementation likely calls for physical separation approaches to disassemble e-waste, remove excess material (epoxy, glass, metallic leads, and housing) from LED chips, and expose the ITO layer within LCD screens.</p></div>","PeriodicalId":605,"journal":{"name":"JOM","volume":"77 10","pages":"7415 - 7434"},"PeriodicalIF":2.3000,"publicationDate":"2025-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11837-025-07623-5.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"JOM","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s11837-025-07623-5","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Gallium (Ga) and indium (In) share similarities in their chemical behavior, their dilute presence in waste electronics (e-waste), and recycling rates close to 0% from such streams. Designing processes to extract gallium from LED chips and indium from LCD screens simultaneously reveals the potential and necessary distinctions for a flexible process based on elemental sulfur reactivity, which can be applied to both feedstocks. Whereas Ga- and In-compounds found in e-waste (gallium nitride, GaN; indium tin oxide, ‘ITO’) are recalcitrant to dissolution in aqueous feedstocks, the reaction with sulfur gas to form volatile sulfides may support their selective extraction from prepared e-waste. Process conditions for selective sulfidation are herein informed from thermodynamics and demonstrated experimentally. Vapor phase transport of the volatile sulfides is a powerful means to collect and enrich gallium and indium. Practical implementation likely calls for physical separation approaches to disassemble e-waste, remove excess material (epoxy, glass, metallic leads, and housing) from LED chips, and expose the ITO layer within LCD screens.
期刊介绍:
JOM is a technical journal devoted to exploring the many aspects of materials science and engineering. JOM reports scholarly work that explores the state-of-the-art processing, fabrication, design, and application of metals, ceramics, plastics, composites, and other materials. In pursuing this goal, JOM strives to balance the interests of the laboratory and the marketplace by reporting academic, industrial, and government-sponsored work from around the world.