Ahmed S. Al-Jawadi, Mohammad Tariq Yaseen, Qais Thanon Algwari
{"title":"TCAD-Based Analysis of a Novel Dual Dielectric Gate MOSFET for High-Speed Applications","authors":"Ahmed S. Al-Jawadi, Mohammad Tariq Yaseen, Qais Thanon Algwari","doi":"10.1007/s12633-025-03386-5","DOIUrl":null,"url":null,"abstract":"<div><p>Short-channel effects (SCEs) and mobility degradation remain significant barriers to MOSFET scaling. This study proposes novel asymmetric dual oxide MOSFET structures with a 20 nm gate length, utilizing different gate oxide materials (TiO₂ and HfO₂) and both single and dual metal gate configurations. These designs are optimized through gate work function engineering to enhance device performance. Simulations using Silvaco TCAD confirm that the proposed structures particularly the Dual Metal Asymmetric Dual Oxide (DMADO) configuration offer significant improvements in ON current, switching efficiency, and suppression of short-channel effects. The results indicate the potential of these architectures for future high-performance, low-power nanoelectronic applications.\n</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 12","pages":"2921 - 2932"},"PeriodicalIF":3.3000,"publicationDate":"2025-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-025-03386-5","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
Short-channel effects (SCEs) and mobility degradation remain significant barriers to MOSFET scaling. This study proposes novel asymmetric dual oxide MOSFET structures with a 20 nm gate length, utilizing different gate oxide materials (TiO₂ and HfO₂) and both single and dual metal gate configurations. These designs are optimized through gate work function engineering to enhance device performance. Simulations using Silvaco TCAD confirm that the proposed structures particularly the Dual Metal Asymmetric Dual Oxide (DMADO) configuration offer significant improvements in ON current, switching efficiency, and suppression of short-channel effects. The results indicate the potential of these architectures for future high-performance, low-power nanoelectronic applications.
期刊介绍：
The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
