A 318–342-GHz Microbump-Antenna-Integrated CMOS Transmitter With Spatial Multiplexing for Short-Range OOK Communication

IF 4.5 1区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2025-04-23 DOI:10.1109/TMTT.2025.3558318

Zhenghuan Wei;Yizhu Shen;Zhen Lin;Sanming Hu

{"title":"A 318–342-GHz Microbump-Antenna-Integrated CMOS Transmitter With Spatial Multiplexing for Short-Range OOK Communication","authors":"Zhenghuan Wei;Yizhu Shen;Zhen Lin;Sanming Hu","doi":"10.1109/TMTT.2025.3558318","DOIUrl":null,"url":null,"abstract":"Microbump antenna integrated with active circuits opens the pathway to miniaturized terahertz (THz) short-range communication devices. In this article, a 318–342-GHz spatial multiplexing on-off keying (OOK) CMOS transmitter (TX) with a dual-polarized microbump antenna is presented. First, compared with conventional postprocessing technologies, the solder-ball-based dual-polarized microbump antenna features a low profile, small aperture, and high efficiency. Excellent port isolation and cross-polarization discrimination are achieved. Second, a proposed on-chip switch-based modulator supports Gbps-level data rates above 300 GHz. It maintains constant impedance in <sc>on/off</small> states at 300–400 GHz. Third, a proposed harmonic oscillator with intercoupling inductors is synthesized based on the two-stage matching network. A high-power THz carrier is provided and less affected by the load variations. The chip is fabricated using a 40-nm CMOS process. The total chip area is 0.3 mm<sup>2</sup>, primarily consisting of the aperture. A maximum equivalent isotropic radiated power (EIRP) of −7.1 dBm is achieved at 323 GHz. It provides a 7.2% tuning range, spanning 318–342 GHz. The TX features a recorded switching ratio of 25 dB at 323 GHz, and a total efficiency of 0.16% including dc-to-THz efficiency with aperture efficiency. A 2-Gbps data rate at a 5-cm range in a single channel under dual-polarization concurrent communication is demonstrated.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 9","pages":"5778-5790"},"PeriodicalIF":4.5000,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Microwave Theory and Techniques","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10975039/","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

Microbump antenna integrated with active circuits opens the pathway to miniaturized terahertz (THz) short-range communication devices. In this article, a 318–342-GHz spatial multiplexing on-off keying (OOK) CMOS transmitter (TX) with a dual-polarized microbump antenna is presented. First, compared with conventional postprocessing technologies, the solder-ball-based dual-polarized microbump antenna features a low profile, small aperture, and high efficiency. Excellent port isolation and cross-polarization discrimination are achieved. Second, a proposed on-chip switch-based modulator supports Gbps-level data rates above 300 GHz. It maintains constant impedance in on/off states at 300–400 GHz. Third, a proposed harmonic oscillator with intercoupling inductors is synthesized based on the two-stage matching network. A high-power THz carrier is provided and less affected by the load variations. The chip is fabricated using a 40-nm CMOS process. The total chip area is 0.3 mm², primarily consisting of the aperture. A maximum equivalent isotropic radiated power (EIRP) of −7.1 dBm is achieved at 323 GHz. It provides a 7.2% tuning range, spanning 318–342 GHz. The TX features a recorded switching ratio of 25 dB at 323 GHz, and a total efficiency of 0.16% including dc-to-THz efficiency with aperture efficiency. A 2-Gbps data rate at a 5-cm range in a single channel under dual-polarization concurrent communication is demonstrated.

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一种用于近距离OOK通信的318 - 342 ghz空间复用集成微凸天线CMOS发射机

集成有源电路的微凸点天线为小型化太赫兹（THz）短程通信设备开辟了道路。本文设计了一种318 - 342 ghz空间多路开关键控（OOK） CMOS发射机（TX），采用双极化微凸点天线。首先，与传统后处理技术相比，基于钎料球的双极化微凸点天线具有外形小、孔径小、效率高等特点。实现了良好的端口隔离和交叉极化识别。其次，提出了一种基于片上开关的调制器，支持300 GHz以上的gbps级数据速率。它在300-400 GHz的开/关状态下保持恒定的阻抗。第三，基于两级匹配网络，合成了一种具有互耦电感的谐振子。提供高功率太赫兹载波，受负载变化的影响较小。该芯片采用40纳米CMOS工艺制造。芯片总面积为0.3 mm2，主要由孔径组成。在323 GHz时，最大等效各向同性辐射功率（EIRP）为−7.1 dBm。它提供了7.2%的调谐范围，跨越318-342 GHz。该TX在323 GHz时记录的开关比为25 dB，总效率为0.16%，包括dc-to-THz效率和孔径效率。在双极化并发通信条件下，在单通道5cm范围内实现了2gbps的数据速率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Microwave Theory and Techniques 工程技术-工程：电子与电气

CiteScore

8.60

自引率

18.60%

发文量

486

审稿时长

6 months

期刊介绍： The IEEE Transactions on Microwave Theory and Techniques focuses on that part of engineering and theory associated with microwave/millimeter-wave components, devices, circuits, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals. This includes scientific, technical, and industrial, activities. Microwave theory and techniques relates to electromagnetic waves usually in the frequency region between a few MHz and a THz; other spectral regions and wave types are included within the scope of the Society whenever basic microwave theory and techniques can yield useful results. Generally, this occurs in the theory of wave propagation in structures with dimensions comparable to a wavelength, and in the related techniques for analysis and design.