Improved On-Wafer Probing of High-Frequency Components Based on Optical Recognition of the Probe Positions

IF 4.5 1区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2025-04-22 DOI:10.1109/TMTT.2025.3557081

Domenico Vitali;Alessandro Chillico;Wojciech Samek;Olof Bengtsson

{"title":"Improved On-Wafer Probing of High-Frequency Components Based on Optical Recognition of the Probe Positions","authors":"Domenico Vitali;Alessandro Chillico;Wojciech Samek;Olof Bengtsson","doi":"10.1109/TMTT.2025.3557081","DOIUrl":null,"url":null,"abstract":"This article describes a novel method for on-wafer probing of high-frequency components based on optical recognition of probe skating and positions. The method enables a more accurate automatic probing of on-wafer structures and is developed to increase precision and accuracy in radio frequency (RF) measurements. The presented real-time optical recognition of the probe touchdown enables an estimated probe skating precision of <inline-formula> <tex-math>$\\pm ~3~\\mu $ </tex-math></inline-formula>m on the evaluated probe system. Optical identification of the probes’ position is used for verification of the measurement distance. Wafer mapping of S-parameters conducted on microstrip (MS) lines on a GaN wafer are evaluated with regard to accuracy and precision in the 0.5–50 GHz range using metrology software for S-parameter analysis. The developed probing method is verified by comparing it to a standard procedure with fixed <italic>Z</i>-height probing and to a bow-compensated method, with all measurements conducted on the same setup and the same device. It is shown that the optically recognized probe skating and position detection can improve the accuracy of S-parameter measurements by up to 50% for devices positioned across a wafer, assuming a <inline-formula> <tex-math>$0.5\\sigma $ </tex-math></inline-formula> acceptance margin for the probe distance.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 9","pages":"6554-6566"},"PeriodicalIF":4.5000,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10973306","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Microwave Theory and Techniques","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10973306/","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

This article describes a novel method for on-wafer probing of high-frequency components based on optical recognition of probe skating and positions. The method enables a more accurate automatic probing of on-wafer structures and is developed to increase precision and accuracy in radio frequency (RF) measurements. The presented real-time optical recognition of the probe touchdown enables an estimated probe skating precision of

$\pm ~3~\mu $

m on the evaluated probe system. Optical identification of the probes’ position is used for verification of the measurement distance. Wafer mapping of S-parameters conducted on microstrip (MS) lines on a GaN wafer are evaluated with regard to accuracy and precision in the 0.5–50 GHz range using metrology software for S-parameter analysis. The developed probing method is verified by comparing it to a standard procedure with fixed Z-height probing and to a bow-compensated method, with all measurements conducted on the same setup and the same device. It is shown that the optically recognized probe skating and position detection can improve the accuracy of S-parameter measurements by up to 50% for devices positioned across a wafer, assuming a

$0.5\sigma $

acceptance margin for the probe distance.

查看原文本刊更多论文

基于探针位置光学识别的高频元件片上探测改进方法

本文提出了一种基于探针滑动和位置光学识别的高频元件片上探测新方法。该方法能够更准确地自动探测晶圆结构，并开发用于提高射频（RF）测量的精度和准确性。所提出的探测器着陆的实时光学识别使评估的探头系统的估计探头滑动精度为$\pm ~3~\mu $ m。对探头位置的光学识别用于测量距离的验证。在GaN晶圆上的微带（MS）线上进行s参数的晶圆映射，使用s参数分析的计量软件评估了0.5-50 GHz范围内s参数的准确性和精度。通过将所开发的探测方法与固定z高度探测的标准程序和弓形补偿方法进行比较，验证了所开发的探测方法，所有测量都在同一设置和同一设备上进行。结果表明，采用光学识别的探针滑动和位置检测方法可使s参数测量精度提高50％以上% for devices positioned across a wafer, assuming a $0.5\sigma $ acceptance margin for the probe distance.

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Transactions on Microwave Theory and Techniques 工程技术-工程：电子与电气

CiteScore

8.60

自引率

18.60%

发文量

486

审稿时长

6 months

期刊介绍： The IEEE Transactions on Microwave Theory and Techniques focuses on that part of engineering and theory associated with microwave/millimeter-wave components, devices, circuits, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals. This includes scientific, technical, and industrial, activities. Microwave theory and techniques relates to electromagnetic waves usually in the frequency region between a few MHz and a THz; other spectral regions and wave types are included within the scope of the Society whenever basic microwave theory and techniques can yield useful results. Generally, this occurs in the theory of wave propagation in structures with dimensions comparable to a wavelength, and in the related techniques for analysis and design.