Mario Kupresak;Bruno Eckmann;Johannes Hoffmann;Michael Baumann;Philippe Peter;Jasmin Smajic;Juerg Leuthold
{"title":"Robust Numerical Solver for Nonlinear Semiconductor Problems","authors":"Mario Kupresak;Bruno Eckmann;Johannes Hoffmann;Michael Baumann;Philippe Peter;Jasmin Smajic;Juerg Leuthold","doi":"10.1109/TMTT.2025.3576061","DOIUrl":null,"url":null,"abstract":"In this work, we develop a numerical solver, efficiently and robustly treating highly nonlinear semiconductor device problems. Beyond the capabilities of commercial tools, the solver can compute the time-domain capacitance and the spectrum of the device current. The solver is based on the finite element method (FEM) and employs the successive under-relaxation scheme. Its capability has been assessed and validated in a study of an axisymmetric metal-oxide–semiconductor (MOS) structure, presenting an archetypal scanning microwave microscopy (SMM) calibration sample, with both <italic>n</i>- and <italic>p</i>-doped semiconductors, including different excitation sources. Excellent agreement was obtained, when testing the tool against features of a commercial tool. By computing the capacitance for the applied low-frequency (LF) bias, combined with a high-frequency (HF) probe signal, the spectrum of the current flowing in the structure was evaluated, revealing mix-product components. This allowed us to verify the solver against measurements, resulting in a very good agreement.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 9","pages":"6051-6058"},"PeriodicalIF":4.5000,"publicationDate":"2025-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Microwave Theory and Techniques","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11074340/","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, we develop a numerical solver, efficiently and robustly treating highly nonlinear semiconductor device problems. Beyond the capabilities of commercial tools, the solver can compute the time-domain capacitance and the spectrum of the device current. The solver is based on the finite element method (FEM) and employs the successive under-relaxation scheme. Its capability has been assessed and validated in a study of an axisymmetric metal-oxide–semiconductor (MOS) structure, presenting an archetypal scanning microwave microscopy (SMM) calibration sample, with both n- and p-doped semiconductors, including different excitation sources. Excellent agreement was obtained, when testing the tool against features of a commercial tool. By computing the capacitance for the applied low-frequency (LF) bias, combined with a high-frequency (HF) probe signal, the spectrum of the current flowing in the structure was evaluated, revealing mix-product components. This allowed us to verify the solver against measurements, resulting in a very good agreement.
期刊介绍:
The IEEE Transactions on Microwave Theory and Techniques focuses on that part of engineering and theory associated with microwave/millimeter-wave components, devices, circuits, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals. This includes scientific, technical, and industrial, activities. Microwave theory and techniques relates to electromagnetic waves usually in the frequency region between a few MHz and a THz; other spectral regions and wave types are included within the scope of the Society whenever basic microwave theory and techniques can yield useful results. Generally, this occurs in the theory of wave propagation in structures with dimensions comparable to a wavelength, and in the related techniques for analysis and design.