Wenyang Wang, Jinshan Yao, Lize Li, Luyu Wang, Tianyu Long, Huachen Ge, Hong Lu, Baile Chen
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引用次数: 0
Abstract
Digital alloy (DA) InAlAs has been employed as the multiplication layer in separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiodes (APDs) to suppress excess noise in our previous work. In this work, a partially depleted absorber (PDA) is introduced to enhance bandwidth, while a back-illumination structure with flip-chip bonding is utilized to improve quantum efficiency and further boost response speed through inductive peaking. The APD exhibits a dark current density of approximately 8.5 mA/cm² at 90% breakdown voltage, a multiplication gain of 50 before avalanche breakdown, and a responsivity of 0.49 A/W at unit gain. Frequency response measurements indicate a significant improvement after flip-chip bonding, with the bandwidth increasing from 15.6 GHz to 22 GHz. Eye diagrams were obtained at data rates up to 40 Gbps, demonstrating the device's high-speed performance.
期刊介绍：
The Optical Society (OSA) publishes high-quality, peer-reviewed articles in its portfolio of journals, which serve the full breadth of the optics and photonics community.
Optics Letters offers rapid dissemination of new results in all areas of optics with short, original, peer-reviewed communications. Optics Letters covers the latest research in optical science, including optical measurements, optical components and devices, atmospheric optics, biomedical optics, Fourier optics, integrated optics, optical processing, optoelectronics, lasers, nonlinear optics, optical storage and holography, optical coherence, polarization, quantum electronics, ultrafast optical phenomena, photonic crystals, and fiber optics. Criteria used in determining acceptability of contributions include newsworthiness to a substantial part of the optics community and the effect of rapid publication on the research of others. This journal, published twice each month, is where readers look for the latest discoveries in optics.
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