D. M. Kavya, Akshay Kumar Sonwane, Y. N. Sudhakar, Sajan D. George and Y. Raviprakash
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引用次数: 0
Abstract
Antimony sulfide (Sb2S3) is a promising candidate for photoelectrochemical (PEC) water splitting due to its narrow band gap (∼1.7 eV), high optical absorption coefficient, and the earth-abundant nature of its constituent elements. However, deep-level defects promoting charge carrier recombination often hinder PEC performance. In this study, we investigated the effects of silver (Ag) incorporation on the structural, morphological, and photoelectrochemical properties of thermally evaporated Sb2S3 thin films. Compared with pristine films, Ag doping induces a shift in the preferred crystallographic orientation from (hk0) to (hk1), with notable morphological modifications and a reduction in surface roughness. Despite these structural improvements, the photocurrent density of the Ag-doped films decreased from 0.49 to 0.27 mA cm−2 under standard illumination, indicating that Ag incorporation adversely affects charge transport and catalytic activity. These findings highlight the critical role of dopant-induced defects in governing the PEC performance of Sb2S3-based photoelectrodes.
硫化锑(Sb2S3)由于其窄带隙(~ 1.7 eV)、高光吸收系数以及其组成元素的地球丰度而成为光电化学(PEC)水分解的有希望的候选材料。然而,促进载流子复合的深层次缺陷往往阻碍了电化学性能的提高。在本研究中,我们研究了银(Ag)掺入对热蒸发Sb2S3薄膜结构、形态和光电化学性能的影响。与原始薄膜相比,Ag掺杂导致首选晶体取向从(hk0)转变为(hk1),具有显著的形态改变和表面粗糙度降低。尽管有这些结构改进,但在标准照明下,掺银薄膜的光电流密度从0.49 mA cm−2下降到0.27 mA cm−2,这表明银的掺入对电荷传输和催化活性有不利影响。这些发现强调了掺杂物诱导缺陷在控制sb2s3基光电极的PEC性能中的关键作用。