Fabrication and characterisation of high response Cu/ (PVA-CdWO4) / p-Si Schottky diode for Ultraviolet photo detection

IF 3.1 4区物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Current Applied Physics Pub Date : 2025-09-12 DOI:10.1016/j.cap.2025.09.008

K.U. Aiswarya , K.J. Arun , M.D. Aggarwal

{"title":"Fabrication and characterisation of high response Cu/ (PVA-CdWO4) / p-Si Schottky diode for Ultraviolet photo detection","authors":"K.U. Aiswarya , K.J. Arun , M.D. Aggarwal","doi":"10.1016/j.cap.2025.09.008","DOIUrl":null,"url":null,"abstract":"<div><div>In the present work, Metal Polymer Semiconductor (M-P-S) structured Schottky Barrier Diode (SBD) with copper metal, (PVA- CdWO<sub>4</sub>) polymer nanocomposite interfacial insulating layer and p-Si as semiconductor forming (Cu/(PVA- CdWO<sub>4</sub>)/p-Si) structure is fabricated and analysed for its photo detection properties. Studies has been done to investigate how the CdWO<sub>4</sub> content influences the morphological, structural, optical and electrical properties of the PVA- CdWO<sub>4</sub> composite films. Diode under illumination shows higher current values compared to dark indicating a high photo-responsive nature of the fabricated diodes. As the power of the illuminating source increases, the ideality factor decreases and barrier height increases. The photodiode parameters like Photo sensitivity, Responsivity, Quantum efficiency and Detectivity also enhances with CdWO<sub>4</sub> concentration and the MPS diode fabricated with 10 wt% of nanoparticles shows better results when illuminated by highest power light source where a responsivity of 101.24 mA/W and detectivity of 16.20 × 10<sup>10</sup> is observed.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 108-121"},"PeriodicalIF":3.1000,"publicationDate":"2025-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Current Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1567173925001877","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

Abstract

In the present work, Metal Polymer Semiconductor (M-P-S) structured Schottky Barrier Diode (SBD) with copper metal, (PVA- CdWO₄) polymer nanocomposite interfacial insulating layer and p-Si as semiconductor forming (Cu/(PVA- CdWO₄)/p-Si) structure is fabricated and analysed for its photo detection properties. Studies has been done to investigate how the CdWO₄ content influences the morphological, structural, optical and electrical properties of the PVA- CdWO₄ composite films. Diode under illumination shows higher current values compared to dark indicating a high photo-responsive nature of the fabricated diodes. As the power of the illuminating source increases, the ideality factor decreases and barrier height increases. The photodiode parameters like Photo sensitivity, Responsivity, Quantum efficiency and Detectivity also enhances with CdWO₄ concentration and the MPS diode fabricated with 10 wt% of nanoparticles shows better results when illuminated by highest power light source where a responsivity of 101.24 mA/W and detectivity of 16.20 × 10¹⁰ is observed.

Abstract Image

查看原文本刊更多论文

紫外光探测用高响应Cu/ (PVA-CdWO4) / p-Si肖特基二极管的制备与表征

本文制备了金属聚合物半导体（M-P-S）结构的肖特基势垒二极管（SBD），以金属铜、（PVA- CdWO4）聚合物纳米复合界面绝缘层和p-Si为半导体形成（Cu/(PVA- CdWO4)/p-Si）结构，并分析了其光探测性能。研究了CdWO4含量对PVA- CdWO4复合膜的形态、结构、光学和电学性能的影响。二极管在照明下显示出比黑暗更高的电流值，表明制造的二极管具有高光响应性。随着光源功率的增大，理想因数减小，势垒高度增大。光电二极管的光敏度、响应率、量子效率和探测率等参数也随CdWO4浓度的增加而提高，在最高功率光源照射下，纳米颗粒含量为10 wt%的MPS二极管的响应率为101.24 mA/W，探测率为16.20 × 1010，显示出较好的效果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Current Applied Physics 物理-材料科学：综合

CiteScore

4.80

自引率

0.00%

发文量

213

审稿时长

33 days

期刊介绍： Current Applied Physics (Curr. Appl. Phys.) is a monthly published international journal covering all the fields of applied science investigating the physics of the advanced materials for future applications. Other areas covered: Experimental and theoretical aspects of advanced materials and devices dealing with synthesis or structural chemistry, physical and electronic properties, photonics, engineering applications, and uniquely pertinent measurement or analytical techniques. Current Applied Physics, published since 2001, covers physics, chemistry and materials science, including bio-materials, with their engineering aspects. It is a truly interdisciplinary journal opening a forum for scientists of all related fields, a unique point of the journal discriminating it from other worldwide and/or Pacific Rim applied physics journals. Regular research papers, letters and review articles with contents meeting the scope of the journal will be considered for publication after peer review. The Journal is owned by the Korean Physical Society.