Thermal Characterization of Ultrawide Bandgap Semiconductor Devices: A Review (Adv. Phys. Res. 9/2025)

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Hassan Irshad Bhatti, Xiaohang Li
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引用次数: 0

Abstract

Thermal Characterization for UWBG Devices

Review number e2500039 by Hassan Irshad Bhatti and Xiaohang Li highlights state-of-the-art thermal characterization techniques for ultrawide bandgap (UWBG) semiconductor devices, including Ga2O2, AlN, and diamond. By critically evaluating optical and electrical methods–such as thermoreflectance imaging, micro-Raman thermometry, and micro-thin film thermocouples–the study guides effective thermal metrology selection to address self-heating and reliability in next-generation power and RF electronics.

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超宽带隙半导体器件的热特性:综述(物理学报)。研究》9/2025)
UWBG器件的热表征Hassan Irshad Bhatti和Xiaohang Li的评论号e2500039强调了超宽带隙(UWBG)半导体器件的最先进的热表征技术,包括Ga2O2, AlN和金刚石。通过严格评估光学和电学方法,如热反射成像,微拉曼测温和微薄膜热电偶,该研究指导有效的热计量选择,以解决自加热和可靠性在下一代电力和射频电子。
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