Jung Hun Lee, Jae Young Kim, Hyeon-Ji Lee, Sung-Jin Choi, Yoon Jung Lee, Ho Won Jang
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引用次数: 0
Abstract
Highlights
This review introduces promising semiconductor materials for future transistors, including two-dimensional van der Waals materials, Mott insulators, halide perovskites, and amorphous oxides, with advantages such as clean interfaces, ultra-thin channels, and defect tolerance.
These materials, when combined with advanced gate dielectrics and next-generation interconnects, offer synergistic solutions to scaling challenges such as carrier scattering, oxide thickness limitations, and interface degradation.
The review also discusses reliability concerns including thermal instability and leakage current, and explores future applications in artificial intelligence hardware, in-memory computing, and three-dimensional integration.
期刊介绍:
Nano-Micro Letters is a peer-reviewed, international, interdisciplinary, and open-access journal published under the SpringerOpen brand.
Nano-Micro Letters focuses on the science, experiments, engineering, technologies, and applications of nano- or microscale structures and systems in various fields such as physics, chemistry, biology, material science, and pharmacy.It also explores the expanding interfaces between these fields.
Nano-Micro Letters particularly emphasizes the bottom-up approach in the length scale from nano to micro. This approach is crucial for achieving industrial applications in nanotechnology, as it involves the assembly, modification, and control of nanostructures on a microscale.