DC/RF performance analysis of vertical Nnanowire FET with dielectric pocket and stacked oxide configuration

IF 3 Q2 PHYSICS, CONDENSED MATTER
Rajat Gulghane , Archana Pandey , Swaroop Kumar Macherla , Kavicharan Mummaneni , Ekta Goel
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引用次数: 0

Abstract

As transistors shrink, the gate oxide must become extremely thin. This leads to a quantum mechanical effect called direct tunneling. This creates a significant gate leakage current which is a major source of power consumption and heat in modern chips. Instead of a single thin layer of Silicon Dioxide (SiO2), a stacked oxide and dielectric pocket are used for stronger control of the channel. Hence, this manuscript presents an analysis of a Vertical Nanowire FET device featuring a stacked oxide and dielectric pocket configuration. It demonstrates that the device exhibits improved performance characteristics compared to previously reported data. In this work, the proposed device has been evaluated concerning conventional VNWFET and Dielectric Pocket VNWFET (DP-VNWFET). The device's DC analysis has been conducted, analyzing DC performance metrics such as ION, IOFF, ION/IOFF ratio, subthreshold swing (SS), and threshold voltage (Vt) in comparison to existing reported work. Furthermore, the AC/RF performance of the device has been evaluated based on performance metrics such as transconductance (gm), output transconductance (gd), intrinsic gain, gain-bandwidth product (GBP), cutoff frequency, and transconductance frequency product (TFP). The proposed device exhibits excellent characteristics and proves to be highly suitable for both current and emerging technological advancements.
具有介电袋和堆叠氧化物结构的垂直纳米线场效应管的DC/RF性能分析
随着晶体管的缩小,栅极氧化物必须变得非常薄。这导致了一种称为直接隧道效应的量子力学效应。这会产生一个显著的栅极泄漏电流,这是现代芯片功耗和热量的主要来源。与单层二氧化硅(SiO2)相比,使用堆叠的氧化物和介电袋来加强对通道的控制。因此,本文提出了一种具有堆叠氧化物和介电袋结构的垂直纳米线场效应管器件的分析。它表明,与先前报道的数据相比,该设备具有改进的性能特征。在这项工作中,已经对所提出的器件进行了常规VNWFET和介电口袋VNWFET (DP-VNWFET)的评估。该器件的直流分析已经完成,分析了直流性能指标,如离子、IOFF、离子/IOFF比、亚阈值摆幅(SS)和阈值电压(Vt),并与现有报告的工作进行了比较。此外,基于跨导(gm)、输出跨导(gd)、固有增益、增益带宽积(GBP)、截止频率和跨导频率积(TFP)等性能指标,对器件的AC/RF性能进行了评估。所提出的器件具有优异的特性,并被证明非常适合当前和新兴的技术进步。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
6.50
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0.00%
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