Recent developments in AlGaN/GaN MOSHEMTs for future high power RF electronics: A review

Abstract

AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) have emerged as strong candidates for high-reliability applications in power electronics and radio-frequency systems. This review presents a comprehensive analysis of recent developments in MOSHEMT technology, emphasizing innovations in gate dielectric materials, device architectures, and fabrication techniques aimed at improving long-term operational stability. The integration of high-k and ferroelectric dielectrics has demonstrated enhanced gate control, reduced leakage, and improved threshold voltage tuning. Architectural modifications such as gate recessing, tri-gate structures, and dual-channel configurations have significantly contributed to performance metrics, including ON-resistance (R_ON), transconductance (g_m), and breakdown voltage (V_BR). The review further addresses reliability challenges posed by thermal stress, bias-induced degradation, and radiation exposure, outlining strategies such as surface passivation, optimized annealing, and material selection to mitigate failure mechanisms. The advancements summarized in this work underscore the growing potential of AlGaN/GaN MOSHEMTs in delivering high-efficiency, robust solutions for modern microelectronic systems operating in demanding environments.