Congzhao Dong , Yajun Zhang , Yingpu Bi , Zeyu Li , Yong Ding
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引用次数: 0
Abstract
Constrained by severe bulk charge recombination, the actual photocurrent density of tantalum nitride (Ta3N5) photoanode is much lower than the theoretical maximum value. Herein, we report the doping of phosphorus, a non-metallic element distinct from oxygen, into Ta3N5, resulting in a photocurrent density 9 times higher than that of pristine Ta3N5. Systematic characterization reveals that the phosphorus doping simultaneously enhances the bulk charge separation efficiency and surface charge injection efficiency of Ta3N5, and induces favorable band energy restructuring. Specifically, a type-II homojunction formed between phosphorus-doped near-surface region and bulk Ta3N5 effectively promotes the separation and transfer of photogenerated holes and electrons. Further modification with a NiFe-based cocatalyst enables the optimized photoanode to deliver a photocurrent density of 10 mA/cm2 at 1.23 V versus the reversible hydrogen electrode (RHE) and an applied bias photo-to-current efficiency of 1.78 % at 0.95 V versus RHE. Our work provides a foundation for the development of a broader range of non-metal doped semiconductors.
期刊介绍:
Chinese Chemical Letters (CCL) (ISSN 1001-8417) was founded in July 1990. The journal publishes preliminary accounts in the whole field of chemistry, including inorganic chemistry, organic chemistry, analytical chemistry, physical chemistry, polymer chemistry, applied chemistry, etc.Chinese Chemical Letters does not accept articles previously published or scheduled to be published. To verify originality, your article may be checked by the originality detection service CrossCheck.