Integrating the structural, optical and dielectric behaviour of Al/Ti co-doped ZnO nanoparticles for optoelectronic applications

IF 2.8 3区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER
Ravi Kant , Ranvir Singh Panwar
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Abstract

In this study, Al/Ti co-doped ZnO nanoparticles were synthesized via the co-precipitation method. X-ray diffraction (XRD) analysis confirmed the preservation of wurtzite hexagonal crystal structure across all samples, without any secondary phases. Scanning and transmission electron microscopy (SEM and TEM) revealed that pure ZnO nanoparticles exhibited a nearly spherical morphology, which was mixed with some elongated particles with doping of Ti, indicating dopant-induced modifications in growth dynamics. Fourier-transform infrared (FTIR) spectroscopy identified the characteristic Zn–O vibrational modes, with slight variations in intensity corresponding to the presence of dopants. X-ray photoelectron spectroscopy (XPS) analysis indicated the formation of oxygen vacancies, evidenced by the broadening and shifting of O 1s peaks, suggesting successful incorporation of Al and Ti into the ZnO lattice. UV–Visible spectroscopy showed a blue shift in the absorption edge and an increase in the optical bandgap, attributed to quantum confinement. The dielectric constant increased significantly, ∼450 for Al/Ti co-doped ZnO, accompanied by low dielectric loss, which is likely due to enhanced defect polarization and the presence of oxygen vacancies. Furthermore, electrical conductivity was improved, potentially due to an increase in charge carrier with dopant ions. These findings demonstrate that Al/Ti co-doping make ZnO as promising candidate for optoelectronic and high-frequency electronic devices.
集成Al/Ti共掺杂ZnO纳米粒子的结构、光学和介电性能在光电应用中的应用
本研究采用共沉淀法合成了Al/Ti共掺杂ZnO纳米颗粒。x射线衍射(XRD)分析证实,所有样品中都保留了纤锌矿的六方晶体结构,没有任何二次相。扫描电镜(SEM)和透射电镜(TEM)观察发现,纯ZnO纳米颗粒呈近似球形,掺杂了Ti的细长颗粒,表明掺杂物诱导了生长动力学的改变。傅里叶变换红外光谱(FTIR)鉴定出特征的Zn-O振动模式,其强度与掺杂剂的存在相对应。x射线光电子能谱(XPS)分析表明,氧空位的形成,证明了o1s峰的展宽和移位,表明Al和Ti成功结合到ZnO晶格中。紫外可见光谱显示,由于量子限制,吸收边出现蓝移,光学带隙增加。Al/Ti共掺杂ZnO的介电常数显著增加,约为450,同时伴随着低介电损耗,这可能是由于缺陷极化增强和氧空位的存在。此外,电导率也得到了提高,这可能是由于掺杂离子增加了载流子。这些发现表明,Al/Ti共掺杂使ZnO成为光电子和高频电子器件的有希望的候选者。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Physica B-condensed Matter
Physica B-condensed Matter 物理-物理:凝聚态物理
CiteScore
4.90
自引率
7.10%
发文量
703
审稿时长
44 days
期刊介绍: Physica B: Condensed Matter comprises all condensed matter and material physics that involve theoretical, computational and experimental work. Papers should contain further developments and a proper discussion on the physics of experimental or theoretical results in one of the following areas: -Magnetism -Materials physics -Nanostructures and nanomaterials -Optics and optical materials -Quantum materials -Semiconductors -Strongly correlated systems -Superconductivity -Surfaces and interfaces
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