{"title":"Integrating the structural, optical and dielectric behaviour of Al/Ti co-doped ZnO nanoparticles for optoelectronic applications","authors":"Ravi Kant , Ranvir Singh Panwar","doi":"10.1016/j.physb.2025.417783","DOIUrl":null,"url":null,"abstract":"<div><div>In this study, Al/Ti co-doped ZnO nanoparticles were synthesized via the co-precipitation method. X-ray diffraction (XRD) analysis confirmed the preservation of wurtzite hexagonal crystal structure across all samples, without any secondary phases. Scanning and transmission electron microscopy (SEM and TEM) revealed that pure ZnO nanoparticles exhibited a nearly spherical morphology, which was mixed with some elongated particles with doping of Ti, indicating dopant-induced modifications in growth dynamics. Fourier-transform infrared (FTIR) spectroscopy identified the characteristic Zn–O vibrational modes, with slight variations in intensity corresponding to the presence of dopants. X-ray photoelectron spectroscopy (XPS) analysis indicated the formation of oxygen vacancies, evidenced by the broadening and shifting of O 1s peaks, suggesting successful incorporation of Al and Ti into the ZnO lattice. UV–Visible spectroscopy showed a blue shift in the absorption edge and an increase in the optical bandgap, attributed to quantum confinement. The dielectric constant increased significantly, ∼450 for Al/Ti co-doped ZnO, accompanied by low dielectric loss, which is likely due to enhanced defect polarization and the presence of oxygen vacancies. Furthermore, electrical conductivity was improved, potentially due to an increase in charge carrier with dopant ions. These findings demonstrate that Al/Ti co-doping make ZnO as promising candidate for optoelectronic and high-frequency electronic devices.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"717 ","pages":"Article 417783"},"PeriodicalIF":2.8000,"publicationDate":"2025-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica B-condensed Matter","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0921452625009007","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
In this study, Al/Ti co-doped ZnO nanoparticles were synthesized via the co-precipitation method. X-ray diffraction (XRD) analysis confirmed the preservation of wurtzite hexagonal crystal structure across all samples, without any secondary phases. Scanning and transmission electron microscopy (SEM and TEM) revealed that pure ZnO nanoparticles exhibited a nearly spherical morphology, which was mixed with some elongated particles with doping of Ti, indicating dopant-induced modifications in growth dynamics. Fourier-transform infrared (FTIR) spectroscopy identified the characteristic Zn–O vibrational modes, with slight variations in intensity corresponding to the presence of dopants. X-ray photoelectron spectroscopy (XPS) analysis indicated the formation of oxygen vacancies, evidenced by the broadening and shifting of O 1s peaks, suggesting successful incorporation of Al and Ti into the ZnO lattice. UV–Visible spectroscopy showed a blue shift in the absorption edge and an increase in the optical bandgap, attributed to quantum confinement. The dielectric constant increased significantly, ∼450 for Al/Ti co-doped ZnO, accompanied by low dielectric loss, which is likely due to enhanced defect polarization and the presence of oxygen vacancies. Furthermore, electrical conductivity was improved, potentially due to an increase in charge carrier with dopant ions. These findings demonstrate that Al/Ti co-doping make ZnO as promising candidate for optoelectronic and high-frequency electronic devices.
期刊介绍:
Physica B: Condensed Matter comprises all condensed matter and material physics that involve theoretical, computational and experimental work.
Papers should contain further developments and a proper discussion on the physics of experimental or theoretical results in one of the following areas:
-Magnetism
-Materials physics
-Nanostructures and nanomaterials
-Optics and optical materials
-Quantum materials
-Semiconductors
-Strongly correlated systems
-Superconductivity
-Surfaces and interfaces