Thermodynamical analysis of polytype stability during top-seeded solution growth of SiC using 2D nucleation theory

IF 2 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2025-09-05 DOI:10.1016/j.jcrysgro.2025.128332

Koichi Kakimoto , Satoshi Nakano

引用次数: 0

Abstract

We investigated the dependence of SiC polytypes on process parameters, such as seed temperature and the nitrogen pressure in a furnace, during top-seeded solution growth. The analysis was based on classical thermodynamic nucleation theory in conjunction with numerical results obtained from a global model that includes convective, conductive, and radiative heat transfer. We investigated which SiC polytype (3C-SiC or 4H-SiC) was more stable in the nucleation stage by comparing the nucleation energies of the polytypes. The results showed that 3C-SiC formation was more stable than 4H-SiC formation under growth conditions with nitrogen doping. Furthermore, 3C-SiC was more stable than 4H-SiC at a high supersaturation of carbon in the solution.

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基于二维成核理论的SiC顶种溶液生长多型稳定性热力学分析

我们研究了在顶种溶液生长过程中，SiC多型对工艺参数（如种子温度和炉内氮压力）的依赖性。该分析基于经典热力学成核理论，并结合从包括对流、传导和辐射传热的全局模型获得的数值结果。通过比较多型碳化硅的成核能，研究了哪种多型碳化硅（3C-SiC或4H-SiC）在成核阶段更稳定。结果表明，在氮掺杂的生长条件下，3C-SiC的形成比4H-SiC的形成更稳定。此外，当碳在溶液中高度过饱和时，3C-SiC比4H-SiC更稳定。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.