Al/PCBM/WSe2:MXene/PTPD/ITO Flexible Broadband Photodetector

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Photonics Technology Letters Pub Date : 2025-09-02 DOI:10.1109/LPT.2025.3605019

Tulika Bajpai;Shweta Tripathi

{"title":"Al/PCBM/WSe2:MXene/PTPD/ITO Flexible Broadband Photodetector","authors":"Tulika Bajpai;Shweta Tripathi","doi":"10.1109/LPT.2025.3605019","DOIUrl":null,"url":null,"abstract":"This letter demonstrates a broadband photodetector based on a <inline-formula> <tex-math>$\\text { ITO/Poly-TPD/WSe}_{\\mathbf {2}}$ </tex-math></inline-formula>:MXene/PCBM/Al architecture. The dispersion method prepared Poly-TPD (PTPD) and PCBM functions as hole transport layer (HTL) and electron transport layer (ETL) while <inline-formula> <tex-math>$\\text {WSe}_{\\mathbf {2}}$ </tex-math></inline-formula>:MXene nanocomposite (NC) serves as the active layer in the device. The film deposition is executed using spin coater whereas Al electrode deposition is performed in thermal evaporation chamber using shadow masking approach. At 350 nm (UV), 400 nm (visible), and 1450 nm (IR), the suggested photodetector shows maximum responsivity (A/W) of 2354, 2425, and 736.7 for −1V bias at a fixed optical power of <inline-formula> <tex-math>$0.118~\\mu $ </tex-math></inline-formula>W. The interfacial layers (ETL/HTL) and <inline-formula> <tex-math>$\\text {WSe}_{\\mathbf {2}}$ </tex-math></inline-formula>:MXene nanocomposite shows promising characteristic for the use in optoelectronic applications.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 24","pages":"1397-1400"},"PeriodicalIF":2.5000,"publicationDate":"2025-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Technology Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11146766/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

This letter demonstrates a broadband photodetector based on a

$\text { ITO/Poly-TPD/WSe}_{\mathbf {2}}$

:MXene/PCBM/Al architecture. The dispersion method prepared Poly-TPD (PTPD) and PCBM functions as hole transport layer (HTL) and electron transport layer (ETL) while

$\text {WSe}_{\mathbf {2}}$

:MXene nanocomposite (NC) serves as the active layer in the device. The film deposition is executed using spin coater whereas Al electrode deposition is performed in thermal evaporation chamber using shadow masking approach. At 350 nm (UV), 400 nm (visible), and 1450 nm (IR), the suggested photodetector shows maximum responsivity (A/W) of 2354, 2425, and 736.7 for −1V bias at a fixed optical power of

$0.118~\mu $

W. The interfacial layers (ETL/HTL) and

$\text {WSe}_{\mathbf {2}}$

:MXene nanocomposite shows promising characteristic for the use in optoelectronic applications.

查看原文本刊更多论文

Al/PCBM/WSe2:MXene/PTPD/ITO柔性宽带光电探测器

这封信演示了一个基于$\text {ITO/Poly-TPD/WSe}_{\mathbf {2}}$:MXene/PCBM/Al架构的宽带光电探测器。分散法制备的Poly-TPD （PTPD）和PCBM分别作为空穴传输层（HTL）和电子传输层（ETL）， $\text {WSe}_{\mathbf {2}}$:MXene纳米复合材料（NC）作为器件的有源层。薄膜沉积采用自旋镀膜机进行，而铝电极沉积采用阴影掩蔽方法在热蒸发室中进行。在350 nm （UV）、400 nm（可见光）和1450 nm （IR）下，在固定光功率为0.118~\mu $ W的- 1V偏置下，所设计的光电探测器的最大响应度（A/W）分别为2354、2425和736.7。界面层（ETL/ html）和$\text {WSe}_{\mathbf {2}}$:MXene纳米复合材料在光电应用中表现出良好的特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Photonics Technology Letters 工程技术-工程：电子与电气

CiteScore

5.00

自引率

3.80%

发文量

404

审稿时长

2.0 months

期刊介绍： IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.