Reliability optimization of charge deduction approach employing bio-tunnel FET

IF 2.5 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2025-09-10 DOI:10.1007/s10825-025-02409-z

Amit Bhattacharyya, Manash Chanda

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引用次数: 0

Abstract

This article presents a study of the reliability of miscellaneous biomarker recognition in serum for both healthy and diseased males and females and the relevant sensitivity analysis using a short-gated dual-pocket-doped hetero-gate metal stack with hetero-structure tunnel FET-supported biosensor (SG-DP-HGM Bio-HTFET). The significant biomarkers preferred and modeled in this article comprise prostate-specific antigen (PSA), human epididymis protein 4 (HE4), C-erbB-2, and monokine induced by interferon gamma (MIG). The charge deduction reliant approach has been utilized, and the outcomes align through the theoretical perceptive of the model. Device optimization for superior sensitivity is achieved by using Silvaco ATLAS TCAD device simulator. A maximum 17.94% inaccuracy in sensitivity regarding sub-threshold swing (S_SS) has been obtained when we presume steric effect rather repulsive steric effect throughout the concentration deviations. Hence, repulsive steric effect must be addressed during the study of label-free biosensing.

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基于生物隧道场效应管的电荷扣除方法可靠性优化

本文采用短门双口袋掺杂异质结构隧道场效应晶体管（SG-DP-HGM Bio-HTFET）异质结构隧道场效应晶体管，研究了健康和患病男性和女性血清中杂类生物标志物识别的可靠性和相关敏感性分析。本文首选和建模的重要生物标志物包括前列腺特异性抗原（PSA）、人附睾蛋白4 （HE4）、C-erbB-2和干扰素诱导的单因子（MIG）。利用了电荷扣除依赖方法，并通过模型的理论感知使结果一致。通过使用Silvaco ATLAS TCAD设备模拟器，实现了高灵敏度的设备优化。当我们假设整个浓度偏差中存在位阻效应而非排斥性位阻效应时，对亚阈值摆动（SSS）的灵敏度误差最大为17.94%。因此，在无标记生物传感研究中必须解决排斥性空间效应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.