Precursor synthesis and photocatalytic activity of Mn-doped Sr2TiO4 for the oxidation of As(III) and HQ in aqueous solutions

IF 4.6 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
T.I. Chupakhina , O.I. Gyrdasova , A.M. Uporova , Yu.A. Deeva , R.F. Likerov , I.V. Yatsyk , M.A. Cherosov , R.G. Batulin , R.M. Eremina , L.Y. Buldakova , I.V. Baklanova , M.Y. Yanchenko , N.V. Podval’naya
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引用次数: 0

Abstract

Sr2Ti1-xMnxO4 (0 ≤ x ≤ 0.1) solid solutions were synthesized using the precursor technology employing formates of the corresponding metals. Mn doping effectively narrows the band gap to Eg = 2.5 eV for Sr2Ti0.9Mn0.1O4. Using voltammetry and EPR spectroscopy, it was established that manganese is present in two oxidation states: the major state is Mn4+ and the minor state is Mn2+. The Mn2+/4+ cation actively participates in excitonic charge separation and promotes the formation of oxidizing radicals (•O2– and •OH) on the surface of Sr2Ti1-xMnxO4, which was confirmed by the Radical Trap method. All solid solutions exhibited a high photooxidative activity in aqueous solutions of hydroquinone (benzene-1,4-diol) and sodium metaarsenate (NaAsO3) under UV and visible light. The photoactivity increases with increasing manganese concentration (x). The kinetic characteristics of Sr2Ti0.9Mn0.1O4 under UV irradiation exceed those of the commercial catalyst Degussa P25 by more than 4 times.
mn掺杂Sr2TiO4前驱体的合成及其光催化氧化水溶液中As(III)和HQ的活性
采用采用相应金属甲酸盐的前驱体技术合成了Sr2Ti1-xMnxO4(0≤x≤0.1)固溶体。Mn的掺杂有效地将Sr2Ti0.9Mn0.1O4的带隙缩小到Eg = 2.5 eV。利用伏安法和EPR光谱法确定了锰以两种氧化态存在:主态为Mn4+,次态为Mn2+。Mn2+/4+阳离子积极参与激子电荷分离,促进Sr2Ti1-xMnxO4表面氧化自由基(•O2 -和•OH)的形成,通过自由基陷阱方法证实了这一点。所有固溶体在紫外和可见光下对对苯二酚(苯-1,4-二醇)和偏砷酸钠(NaAsO3)的水溶液均表现出较高的光氧化活性。光活性随锰浓度的增加而增加(x)。Sr2Ti0.9Mn0.1O4在UV照射下的动力学特性比商用催化剂Degussa P25高出4倍以上。
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来源期刊
Materials Science and Engineering: B
Materials Science and Engineering: B 工程技术-材料科学:综合
CiteScore
5.60
自引率
2.80%
发文量
481
审稿时长
3.5 months
期刊介绍: The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.
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