Advances in GaN-on-Glass for Optoelectronic Devices: Progress in Epitaxial Growth, Device Integration, and Applications

Abstract

GaN-on-glass epitaxy technology has transformed the landscape of optoelectronic device fabrication, providing scalable and cost-effective solutions for next-generation optoelectronic applications. Amorphous glass, characterized by large-area scalability, transparency, and low cost, presents various challenges, such as the absence of global epitaxy. Advances in epitaxial methods have facilitated the growth of high-quality GaN thin films and nanostructures on glass substrates. The integration of preorienting layers improves crystallinity, in-plane symmetry, and device functionality. These advancements have led to the successful fabrication of GaN-based light-emitting diodes, photodetectors, and hybrid heterostructures for full-color displays, integrated systems, and energy-efficient devices. Innovations in material compatibility and heterostructure designs allow precise control over crystal orientation and defect densities, thereby pushing the boundaries of optoelectronic performance. This review highlights the current progress in GaN-on-glass technology and emphasizes its transformative role in optoelectronics. By reflecting on these advancements and their applications, this review underscores the potential of GaN-on-glass as a cornerstone for high-performance, sustainable optoelectronic devices.