O. V. Podorozhniy, A. V. Rumyantsev, N. I. Borgardt, D. K. Minnebaev, A. E. Ieshkin
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引用次数: 0
Abstract
Xenon ions with energies of 5 and 8 keV are used to amorphize a single-crystal silicon substrate. Cross-sectional samples of the irradiated areas are examined by transmission electron microscopy in the bright-field mode, and the thicknesses of the amorphized layers are determined based on analysis of the obtained images. The ion-bombardment process is modeled using the Monte Carlo method along with the critical point defect density model, which makes it possible to obtain theoretical estimates of the thickness of these layers. The calculation results are compared with experimental data. It is shown that Monte Carlo simulation describes the low-energy xenon-ion-induced amorphization of single-crystal silicon with acceptable precision.
期刊介绍：
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques publishes original articles on the topical problems of solid-state physics, materials science, experimental techniques, condensed media, nanostructures, surfaces of thin films, and phase boundaries: geometric and energetical structures of surfaces, the methods of computer simulations; physical and chemical properties and their changes upon radiation and other treatments; the methods of studies of films and surface layers of crystals (XRD, XPS, synchrotron radiation, neutron and electron diffraction, electron microscopic, scanning tunneling microscopic, atomic force microscopic studies, and other methods that provide data on the surfaces and thin films). Articles related to the methods and technics of structure studies are the focus of the journal. The journal accepts manuscripts of regular articles and reviews in English or Russian language from authors of all countries. All manuscripts are peer-reviewed.
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