Surface potential-dependent assembly of DNA origami lattices at SiO2 surfaces†

Adekunle Omoboye, Bhanu Kiran Pothineni, Guido Grundmeier, Zhe She and Adrian Keller
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Abstract

Self-assembled DNA origami lattices have promising applications in the fabrication of functional surfaces for sensing and plasmonics via molecular lithography. While surface-assisted DNA origami lattice assembly at mica surfaces is a straightforward and widely employed method, technologically more relevant SiO2 surfaces still pose a challenge. Lattice assembly on SiO2 surfaces is very sensitive toward environmental conditions and surface properties, which often results in comparably low lattice order even under optimized conditions. Here, we investigate DNA origami lattice assembly at oxidized silicon wafers at room temperature with an applied negative substrate potential. In situ atomic force microscopy reveals that lattice assembly is notably affected by the applied potential, with −120 mV resulting in the highest lattice order after 120 min incubation. The obtained degree of order, however, is lower than that of lattices assembled under equivalent potential-free conditions at an elevated substrate temperature. Varying the concentrations of monovalent and divalent ions in the electrolyte only leads to a further decrease in lattice order. While our results demonstrate the important role of the surface potential in surface-assisted DNA origami lattice assembly, they also suggest that the achievable degree of lattice order is limited by additional factors such as the roughness of the SiO2 surfaces.

Abstract Image

DNA折纸晶格在SiO2表面上的表面电位依赖性组装
自组装DNA折纸晶格在通过分子光刻技术制造传感和等离子体的功能表面方面具有很好的应用前景。虽然在云母表面上进行表面辅助DNA折纸晶格组装是一种简单而广泛应用的方法,但技术上更相关的SiO2表面仍然构成挑战。二氧化硅表面上的晶格组装对环境条件和表面性质非常敏感,即使在优化条件下也经常导致相对较低的晶格顺序。在这里,我们研究了在室温下施加负衬底电位的氧化硅片上的DNA折纸晶格组装。原位原子力显微镜显示,晶格组装明显受到施加电位的影响,−120 mV在孵育120分钟后导致晶格有序度最高。然而,得到的有序度低于在升高的衬底温度下在等效的无电位条件下组装的晶格。改变电解质中单价和二价离子的浓度只会导致晶格序的进一步降低。虽然我们的研究结果证明了表面电位在表面辅助DNA折纸晶格组装中的重要作用,但它们也表明,可以实现的晶格有序程度受到其他因素的限制,例如SiO2表面的粗糙度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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